MRF6S21050LSR5 vs MRF6S21050LR5 Comparaison
Comparaison détaillée côte à côte de MRF6S21050LSR5 par NXP Semiconductors et MRF6S21050LR5 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF6S21050LSR5 - 11.5W W-CDMA RF Power MOSFET | NXP | NI-400S
MRF6S21050LSR5 ✓ ActifComparaison des spécifications
| Paramètre | MRF6S21050LSR5 | MRF6S21050LR5 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $51,40 | $21,40 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Type de transistor | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel RF Power MOSFET (LDMOS) |
| Technology | LDMOS (Laterally Diffused MOSFET) | HV6 LDMOS |
| Drain-Source Voltage (VDS) Maximum | 65 V | — |
| Gate-Source Voltage (VGS) Maximum | [DATA_NEEDED: VGS max rating] | — |
| Nominal Operating Drain Voltage | 28 V | — |
| Typical Operating Frequency | 2.16 GHz (2110-2170 MHz W-CDMA band) | — |
| Power Gain (Gps) | 16 dB typical at 2.16 GHz | — |
| Output Power (Pout) | 11.5 W CW | 11.5 W |
| Drain Current (ID) at Test | 450 mA | — |
| Boîtier / Format | NI-400S (ceramic, 2-flange) | NI-400 (ceramic flanged) |
| Type de montage | Surface Mount / Screw-Mount | Flange mount, chassis-mount |
| Application | W-CDMA, TDMA, CDMA, multicarrier base-station PA | — |
| Configuration | Single, Common Source | Single N-channel |
| Statut RoHS | Compliant | Compliant (per distributor listing) |
| Lead-Free | Yes | — |
| Operating Mode | Class AB | — |
| MSL Rating | [DATA_NEEDED: MSL level] | — |
| Drain-Source Voltage (Vdss) | — | 28 V |
| Continuous Drain Current (Id) | — | 450 mA |
| Power Gain (Gp) | — | 16 dB at 2.16 GHz |
| Operating Frequency | — | 2.16 GHz (W-CDMA band) |
| Test Conditions | — | 2.16 GHz, 28 V, W-CDMA modulation |
| Capacité d'entrée | — | [DATA_NEEDED: input capacitance] |
| Capacité de sortie | — | [DATA_NEEDED: output capacitance] |
| Thermal Resistance (Rthj-c) | — | [DATA_NEEDED: junction-to-case thermal resistance] |
| Plage de température de fonctionnement | — | -40C to +150C (junction) |
| Niveau MSL | — | Not applicable (ceramic flanged) |
| ESD Protection | — | Yes (integrated, per device family) |