MRF6S21050LSR5 vs MRF6S21050LR5 Comparación
Comparación detallada lado a lado de MRF6S21050LSR5 por NXP Semiconductors y MRF6S21050LR5 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF6S21050LSR5 - 11.5W W-CDMA RF Power MOSFET | NXP | NI-400S
MRF6S21050LSR5 ✓ ActivoComparación de especificaciones
| Parámetro | MRF6S21050LSR5 | MRF6S21050LR5 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $51,40 | $21,40 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel RF Power MOSFET (LDMOS) |
| Technology | LDMOS (Laterally Diffused MOSFET) | HV6 LDMOS |
| Drain-Source Voltage (VDS) Maximum | 65 V | — |
| Gate-Source Voltage (VGS) Maximum | [DATA_NEEDED: VGS max rating] | — |
| Nominal Operating Drain Voltage | 28 V | — |
| Typical Operating Frequency | 2.16 GHz (2110-2170 MHz W-CDMA band) | — |
| Power Gain (Gps) | 16 dB typical at 2.16 GHz | — |
| Output Power (Pout) | 11.5 W CW | 11.5 W |
| Drain Current (ID) at Test | 450 mA | — |
| Encapsulado / Carcasa | NI-400S (ceramic, 2-flange) | NI-400 (ceramic flanged) |
| Tipo de montaje | Surface Mount / Screw-Mount | Flange mount, chassis-mount |
| Application | W-CDMA, TDMA, CDMA, multicarrier base-station PA | — |
| Configuration | Single, Common Source | Single N-channel |
| Estado RoHS | Compliant | Compliant (per distributor listing) |
| Lead-Free | Yes | — |
| Operating Mode | Class AB | — |
| MSL Rating | [DATA_NEEDED: MSL level] | — |
| Drain-Source Voltage (Vdss) | — | 28 V |
| Continuous Drain Current (Id) | — | 450 mA |
| Power Gain (Gp) | — | 16 dB at 2.16 GHz |
| Operating Frequency | — | 2.16 GHz (W-CDMA band) |
| Test Conditions | — | 2.16 GHz, 28 V, W-CDMA modulation |
| Capacitancia de entrada | — | [DATA_NEEDED: input capacitance] |
| Capacitancia de salida | — | [DATA_NEEDED: output capacitance] |
| Thermal Resistance (Rthj-c) | — | [DATA_NEEDED: junction-to-case thermal resistance] |
| Rango de temperatura de funcionamiento | — | -40C to +150C (junction) |
| Nivel MSL | — | Not applicable (ceramic flanged) |
| ESD Protection | — | Yes (integrated, per device family) |