MRF6S9160HSR3 vs MRF8S9102NR3 Vergleich
Detaillierter Direktvergleich von MRF6S9160HSR3 von NXP Semiconductors und MRF8S9102NR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ Letzte BestellmöglichkeitSpezifikationsvergleich
| Parameter | MRF6S9160HSR3 | MRF8S9102NR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Letzte Kaufgelegenheit | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $92,40 | $24,10 |
| Transistortyp | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Lateral Enhancement-Mode MOSFET |
| Application | RF Power Amplifier | RF Power Amplifier, W-CDMA base station |
| Operating Frequency | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | 920 MHz |
| Drain-Source Voltage (Vdss) Rated | 68 V | — |
| Operating Voltage (VDD) | 28 V | — |
| Test Bias Current (IDQ) | 1.2 A | — |
| Output Power (Pout, Avg.) | 35 W Avg. | — |
| Power Gain | 20.9 dB typical at 880 MHz | — |
| Drain Efficiency | 31% typical at 880 MHz | — |
| ACPR @ 750 kHz Offset | -46.8 dBc (N-CDMA) | — |
| Gehäuse | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount | OM-780-2 (3-pin ceramic, flange mount) |
| Montageart | Flange / Chassis Mount with screw holes | Chassis / flange mount with bolt-down thermal pad |
| Lead-Free Status | Lead free (HSR3 suffix) | — |
| Designed Waveforms | N-CDMA, GSM, GSM EDGE, multicarrier | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Family | — | MRF8S9102N / HV8 series |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Drain-Source Operating Voltage (VDS) | — | 28 V (typical test condition) |
| Drain-Source Breakdown Voltage (VDSS) | — | 70 V (max) |
| Average Output Power (POUT) | — | 28 W |
| Drain Current (ID) at bias | — | 750 mA |
| Power Gain (Gp) | — | 23.1 dB |
| Modulation Format | — | Single W-CDMA (also Class AB/C capable) |
| Pin-Anzahl | — | 3 |
| RoHS-Status | — | [DATA_NEEDED: rohs compliance] |
| Operating Mode | — | Class AB or Class C |