MRF6S9160HSR3 vs MRF8S9102NR3 비교

다음의 상세 나란히 비교: MRF6S9160HSR3 제조: NXP Semiconductors 및 MRF8S9102NR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MRF6S9160HSR3 MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors

MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors

MRF6S9160HSR3 ⚠ 최종 구매
NXP Semiconductors
MRF8S9102NR3 MRF8S9102NR3 - 28W RF Power MOSFET 865-960MHz | NXP

MRF8S9102NR3 - 28W RF Power MOSFET 865-960MHz | NXP

MRF8S9102NR3 ✓ 활성

사양 비교

파라미터 MRF6S9160HSR3 MRF8S9102NR3
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 MOSFETs MOSFETs
수명 주기 상태 최종 구매 활성
재고 상태 In Stock In Stock
단가 (USD) $92.40 $24.10
트랜지스터 유형 LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel Lateral Enhancement-Mode MOSFET
Application RF Power Amplifier RF Power Amplifier, W-CDMA base station
Operating Frequency 865 MHz to 960 MHz —
Test Frequency 880 MHz 920 MHz
Drain-Source Voltage (Vdss) Rated 68 V —
Operating Voltage (VDD) 28 V —
Test Bias Current (IDQ) 1.2 A —
Output Power (Pout, Avg.) 35 W Avg. —
Power Gain 20.9 dB typical at 880 MHz —
Drain Efficiency 31% typical at 880 MHz —
ACPR @ 750 kHz Offset -46.8 dBc (N-CDMA) —
패키지 NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount OM-780-2 (3-pin ceramic, flange mount)
실장 유형 Flange / Chassis Mount with screw holes Chassis / flange mount with bolt-down thermal pad
Lead-Free Status Lead free (HSR3 suffix) —
Designed Waveforms N-CDMA, GSM, GSM EDGE, multicarrier —
Manufacturer — NXP Semiconductors (formerly Freescale)
Part Family — MRF8S9102N / HV8 series
Operating Frequency Range — 865 MHz to 960 MHz
Drain-Source Operating Voltage (VDS) — 28 V (typical test condition)
Drain-Source Breakdown Voltage (VDSS) — 70 V (max)
Average Output Power (POUT) — 28 W
Drain Current (ID) at bias — 750 mA
Power Gain (Gp) — 23.1 dB
Modulation Format — Single W-CDMA (also Class AB/C capable)
핀 수 — 3
RoHS 상태 — [DATA_NEEDED: rohs compliance]
Operating Mode — Class AB or Class C

데이터시트 & 자료

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