MRF6S9160HSR3 vs MRF8S9102NR3 Comparaison
Comparaison détaillée côte à côte de MRF6S9160HSR3 par NXP Semiconductors et MRF8S9102NR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ Dernier achatComparaison des spécifications
| Paramètre | MRF6S9160HSR3 | MRF8S9102NR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Dernier achat | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $92,40 | $24,10 |
| Type de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Lateral Enhancement-Mode MOSFET |
| Application | RF Power Amplifier | RF Power Amplifier, W-CDMA base station |
| Operating Frequency | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | 920 MHz |
| Drain-Source Voltage (Vdss) Rated | 68 V | — |
| Operating Voltage (VDD) | 28 V | — |
| Test Bias Current (IDQ) | 1.2 A | — |
| Output Power (Pout, Avg.) | 35 W Avg. | — |
| Power Gain | 20.9 dB typical at 880 MHz | — |
| Drain Efficiency | 31% typical at 880 MHz | — |
| ACPR @ 750 kHz Offset | -46.8 dBc (N-CDMA) | — |
| Boîtier | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount | OM-780-2 (3-pin ceramic, flange mount) |
| Type de montage | Flange / Chassis Mount with screw holes | Chassis / flange mount with bolt-down thermal pad |
| Lead-Free Status | Lead free (HSR3 suffix) | — |
| Designed Waveforms | N-CDMA, GSM, GSM EDGE, multicarrier | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Family | — | MRF8S9102N / HV8 series |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Drain-Source Operating Voltage (VDS) | — | 28 V (typical test condition) |
| Drain-Source Breakdown Voltage (VDSS) | — | 70 V (max) |
| Average Output Power (POUT) | — | 28 W |
| Drain Current (ID) at bias | — | 750 mA |
| Power Gain (Gp) | — | 23.1 dB |
| Modulation Format | — | Single W-CDMA (also Class AB/C capable) |
| Nombre de broches | — | 3 |
| Statut RoHS | — | [DATA_NEEDED: rohs compliance] |
| Operating Mode | — | Class AB or Class C |