MRF7S21080HSR3 - 22W RF Power MOSFET 2.1GHz NI-780S | NXP
Teilenummer: MRF7S21080HSR3 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $95 | $95,00 |
| 10 | $88.5 | $885,00 |
| 100 | $82 | $8.200,00 |
| 250 | $76.75 | $19.187,50 |
| 500 | $71.5 | $35.750,00 |
MRF7S21080HSR3 Übersicht
An RF power MOSFET is a specialized lateral N-channel enhancement-mode transistor optimized for high-frequency, high-power amplification where conventional signal MOSFETs cannot deliver the required RF efficiency and ruggedness. In the hierarchy of power semiconductors, RF power MOSFETs sit below general-purpose power MOSFETs but above small-signal FETs, and they form the final amplification stage in cellular base station transmitter chains where linearity and efficiency are critical. Lateral geometry places source, gate, and drain on the same surface, enabling lower parasitic capacitance and higher gain at RF frequencies than vertical DMOS structures.
Key performance parameters include an operating frequency range of 2110-2170 MHz (UMTS Band 1 / AWS downlink), a P1dB-class pulsed output capability substantially higher than the 22 W average rating, and integrated ESD protection. The device uses a single-carrier W-CDMA reference waveform with 3.84 MHz channel bandwidth and 7.5 dB peak-to-average ratio. ACPR performance of -38 dBc at 5 MHz offset makes the part suitable for 3GPP spectral mask compliance without extensive digital predistortion.
The MRF7S21080HSR3 uses a ceramic-metal sealed cofired (NI-780S/NI-780HS) Air Cavity Package designed for low thermal resistance and high reliability in base station environments. The lateral MOSFET die is matched to 50 ohms at the input and incorporates internal input matching networks that simplify external PCB design. Operating from a 28 V VDD rail with IDQ = 800 mA quiescent bias, the device achieves 32% drain efficiency at 22 W average output, balancing thermal dissipation against linearity. The die is rated for 65 V drain-to-source breakdown.
Typical applications include W-CDMA, LTE, and multi-mode cellular base station power amplifiers, repeaters, and micro-cell transmitters operating in the 2110-2170 MHz UMTS Band 1 / AWS downlink spectrum. The device is also used in military and aerospace RF communication links requiring 2.1 GHz high-linearity amplification.
Designers should ensure the gate bias network provides a stable -2 to -3 V pinch-off voltage with sequenced VDD turn-on to prevent parametric oscillation. Source leads must be grounded directly beneath the package flange using multiple vias to minimize common-source inductance, which would otherwise degrade gain and efficiency at the top end of the operating band.
This page consolidates distributor pricing, parametric cross-reference data, and application engineering guidance not aggregated on the manufacturer datasheet.
Drop-in-Alternativen für MRF7S21080HSR3 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF7S21080HSR3 (gleiche Bauform und Footprint) – abweichend in Mounting Type, Package, Technology, Test Frequency, Transistor Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF7S21080HR3
✅ Drop-In✓ Auf Lager
$24.95 / Stück
Datenblatt ansehen →MRF8S21240H
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF7S21080HSR3 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF7S21080HSR3 |
| Transistortyp | Lateral N-Channel RF Power MOSFET |
| Technology | Lateral MOSFET, enhancement-mode |
| Operating Frequency | 2110 MHz to 2170 MHz |
| Test Frequency | 2167.5 MHz |
| Drain-Source Voltage (VDS max) | 65 V |
| Operating Drain Voltage (VDD) | 28 V |
| Quiescent Drain Current (IDQ) | 800 mA |
| Output Power (Average, W-CDMA) | 22 W |
| Power Gain | 18 dB |
| Drain Efficiency | 32% |
| ACPR at 5 MHz Offset | -38 dBc |
| Device Output Signal PAR | 6.5 dB at 0.01% CCDF |
| Channel Bandwidth | 3.84 MHz |
| Gehäuse | NI-780S (NI-780HS) ceramic-metal sealed |
| Montageart | Surface Mount |
| Configuration | Single |
| Terminal Form | Flat |
| Package Body Material | Ceramic, metal-sealed cofired |
| Lead-Free | Yes |
| RoHS-Status | Compliant (per NXP product page) |
MRF7S21080HSR3 Pin-Konfiguration
| Pin 1 | Gate — RF input / gate bias (matched to 50 ohm with external network) |
| Pin 2 | Drain — RF output / 28 V VDD supply |
| Pin 3 | Source — Ground (must be low-inductance via array directly under package) |
Sicherer Arbeitsbereich - MRF7S21080HSR3
Typische Anwendungen
MRF7S21080HSR3 ist geeignet für 6 Anwendungs: W-CDMA Base Station Power Amplifier Final Stage, LTE / Multi-Mode Cellular Infrastructure PA, Repeater and Micro-Cell Transmitter, Military / Aerospace RF Communication Links, Test and Measurement RF Power Amplifiers, Industrial RF Heating and Drying Systems.
W-CDMA Base Station Power Amplifier Final Stage
The MRF7S21080HSR3 is the canonical final-stage device for UMTS Band 1 (2110-2170 MHz) macro-cell base stations. With 22 W average output power at 28 V VDD and 18 dB power gain, it delivers the required downlink power level for single-sector 3GPP coverage while the -38 dBc ACPR at 5 MHz offset satisfies the W-CDMA spectral emission mask without aggressive digital predistortion. Quiescent bias of 800 mA positions the device in Class AB for the optimum linearity/efficiency trade-off under 3.84 MHz channel bandwidth signals with 7.5 dB PAR. The NI-780S ceramic package maintains junction temperature within safe limits under continuous base-station duty cycles when mounted on a properly sized copper thermal pad.
Empfohlen
LTE / Multi-Mode Cellular Infrastructure PA
Multi-mode cellular base stations operating LTE, W-CDMA, and 5G NR in the 2110-2170 MHz band can use the MRF7S21080HSR3 as the final-stage amplifier for medium-power sectors. The lateral N-channel MOSFET architecture delivers the broadband RF performance needed for carrier aggregation across multiple LTE channels, while the 32% drain efficiency at 22 W average output reduces thermal management cost in space-constrained remote radio heads. Designers can pair the device with NXP's MRFE6VP5600H or similar drivers in a two-stage topology to achieve higher gain and reduce overall BOM cost per watt of RF output.
Empfohlen
Repeater and Micro-Cell Transmitter
RF repeaters, micro-cell, and pico-cell transmitters in the 2.1 GHz UMTS/AWS band benefit from the MRF7S21080HSR3's compact NI-780S surface-mount package and 22 W power level. Micro-cell deployments typically require 1-5 W average per antenna sector; the MRF7S21080HSR3 can be operated below rated power (for example at 5-10 W average) for improved efficiency and longer device lifetime, while still maintaining excellent ACPR. The lateral MOSFET's high gain (18 dB) reduces the number of driver stages needed, which lowers overall repeater cost and PCB footprint.
Empfohlen
Military / Aerospace RF Communication Links
The MRF7S21080HSR3's ceramic-metal sealed NI-780S package meets the environmental and reliability demands of military and aerospace RF communication systems operating at 2110-2170 MHz. The hermetic ceramic body resists humidity, shock, and thermal cycling better than plastic RF packages, while the 65 V drain-source breakdown rating provides headroom for unmatched load conditions encountered in field deployments. Defense programs migrating commercial cellular technology for tactical communications benefit from the part's mature supply chain and NXP's long-term product support commitment.
Empfohlen
Test and Measurement RF Power Amplifiers
Bench-top and rack-mounted test systems that require calibrated 2.1 GHz W-CDMA stimulus signals use the MRF7S21080HSR3 as a compact power amplifier for radiated test chambers and conducted EMC test setups. The 22 W average output easily drives antenna arrays and long cable runs with adequate margin, and the device's well-documented ACPR performance simplifies system-level calibration of test instrumentation. The surface-mount NI-780S package enables automated assembly of test amplifier modules in production quantities.
Empfohlen
Industrial RF Heating and Drying Systems
Industrial 2.1 GHz RF heating and drying systems leverage the MRF7S21080HSR3's continuous-wave capability and rugged ceramic NI-780S package for high-duty-cycle operation. The lateral MOSFET's high efficiency at 2.17 GHz reduces cooling requirements compared to bipolar alternatives, and the 65 V drain-source breakdown tolerates the load mismatches common in industrial RF applicators. Designers must add circulator protection to prevent reflected-power damage during material property changes.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF7S21080HSR3 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF7S21080HR3 | MRF8S21240H |
|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780S (NI-780HS) | NI-780 (same family footprint) | NI-780S (same footprint) |
| Operating Frequency | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz |
| Output Power (Avg, W-CDMA) | 22 W | 22 W | 60 W avg |
| Drain Voltage (VDD) | 28 V | 28 V | 28 V |
| VDS Breakdown | 65 V | 65 V | 65 V |
Wichtigste Unterscheidungsmerkmale
- Optimized specifically for UMTS Band 1 / AWS downlink 2110-2170 MHz (vs. MRF7S21080HR3)
- Right-sized 22 W average power for macro-cell final stage (vs. MRF8S21240H)
- Mature, long-life NXP/Freescale RF MOSFET product line (vs. Generic cross-brand RF MOSFET)
Designhinweise
Estimated: At 22 W W-CDMA output and 32% drain efficiency, the MRF7S21080HSR3 dissipates roughly 45 W internally (Pdiss = Pout/efficiency - Pout = 22/0.32 - 22 = ~46.75 W). With a junction-to-case thermal resistance in the 0.4-0.6 C/W range typical for the NI-780S ceramic package and proper baseplate mounting, designers must keep case temperature below 100 C to maintain long-term reliability. Use a copper thermal pad of at least 100 mm square with thermal vias to the inner ground plane, and consider a forced-air or cold-finger heat sink for continuous operation above 25 C ambient.
Source-lead grounding is the single most critical PCB layout detail for any NI-780 family RF MOSFET. Place a dense via array (10+ vias, 0.3 mm drill, 0.5 mm pitch) directly under the package source tab to minimize common-source inductance Ls. Excess Ls of even 0.5 nH will drop gain by 2-3 dB at 2.17 GHz and degrade efficiency by 5-10 percentage points. Gate and drain matching networks should use low-loss substrate (Rogers RO4003C or equivalent) with controlled-impedance 50 ohm traces, and the input matching network must provide DC blocking to protect the gate from VDD transients.
Do not exceed VDS = 65 V under any transient condition; load mismatch from antenna faults or faulty connectors can produce voltage spikes that destroy the device. Add a circulator or isolator at the output to protect against VSWR excursions greater than 5:1, and verify the gate bias supply provides a sequenced negative pinch-off voltage (typically -2 to -3 V) before VDD ramps up to prevent parametric oscillation during turn-on. Always use NXP's reference PCB layout from the MRF7S21080H datasheet as the starting point; do not rely solely on simulation when the operating frequency exceeds 2 GHz.
Power supply decoupling at the 28 V VDD rail should combine a 10 uF tantalum or polymer bulk capacitor near the drain feed, a 1 uF ceramic for mid-frequency decoupling, and a 100 nF ceramic with low ESL placed within 5 mm of the drain lead. The bias network must include an RF choke (typically a 100 nH to 1 uH air-core or wire-wound inductor) to isolate VDD from the RF output. Use a regulated 28 V supply capable of delivering peak currents of 4-5 A during W-CDMA drive, with less than 50 mVpp ripple to avoid degrading ACPR performance.
Compliance-Informationen
RoHS and lead-free compliance per NXP product page. The MRF7S21080HSR3 is not AEC-Q100 qualified because RF power MOSFETs for base stations are not typically deployed in automotive-grade environments. Halogen-free status not explicitly stated in the provided data; consult the NXP material declaration for verification. REACH and conflict-minerals compliance published in NXP's product environmental documents.
