MRF8P26080HSR3 vs MRF8S21100HSR3 Vergleich
Detaillierter Direktvergleich von MRF8P26080HSR3 von NXP Semiconductors und MRF8S21100HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ AktivNXP Semiconductors
MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP
MRF8S21100HSR3 ✓ AktivSpezifikationsvergleich
| Parameter | MRF8P26080HSR3 | MRF8S21100HSR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $99,85 | $65,00 |
| Transistortyp | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Gen8 LDMOS (Silicon, Lateral) | LDMOS (Laterally Diffused MOSFET) |
| Frequency Range | 2500 MHz to 2700 MHz | 2110 MHz to 2170 MHz |
| Average Output Power (P3dB) | 14 W (W-CDMA, single-carrier) | — |
| Peak Output Power (CW) | 80 W | — |
| Drain-Source Voltage (VDSS max) | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V nominal | 28 V nominal |
| Test Mode | Typical Doherty Single-Carrier W-CDMA | — |
| Application Class | Class AB or Class C capable | — |
| Modulation Formats | W-CDMA, LTE, OFDM, multi-carrier | — |
| Gehäuse | NI-780S-4 (ceramic, flange-mount, air-cavity) | — |
| Montageart | Through-hole flange-mount with screw attachment | Chassis / flange mount, screw-down |
| Lead Finish | Gold-plated (NiPdAu) | — |
| Lead-Free / RoHS | Compliant | — |
| Betriebstemperaturbereich | -40C to +150C (junction) | — |
| Drain-Source Voltage (V(BR)DSS) | — | 65 V |
| Test Frequency | — | 2.14 GHz |
| Output Power (CW, typical) | — | 100 W |
| Average Output Power (W-CDMA) | — | 24 W |
| Power Gain (typ) | — | 18.3 dB at 2.14 GHz |
| Drain Current (ID, max) | — | [DATA_NEEDED: max ID rating] |
| Gehäuse / Bauform | — | NI-780S (Case 465A-06), 3-pin ceramic flange |
| Configuration | — | Single, push-pull N/A |
| Operating Class | — | Class AB or Class C |
| Application | — | W-CDMA, LTE base-station power amplifiers |
| RoHS-Status | — | Compliant (per NXP product family) |
| Lead-Free | — | Yes |