MRF8P26080HSR3 vs MRF8S21100HSR3 비교
다음의 상세 나란히 비교: MRF8P26080HSR3 제조: NXP Semiconductors 및 MRF8S21100HSR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ 활성사양 비교
| 파라미터 | MRF8P26080HSR3 | MRF8S21100HSR3 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $99.85 | $65.00 |
| 트랜지스터 유형 | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Gen8 LDMOS (Silicon, Lateral) | LDMOS (Laterally Diffused MOSFET) |
| Frequency Range | 2500 MHz to 2700 MHz | 2110 MHz to 2170 MHz |
| Average Output Power (P3dB) | 14 W (W-CDMA, single-carrier) | — |
| Peak Output Power (CW) | 80 W | — |
| Drain-Source Voltage (VDSS max) | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V nominal | 28 V nominal |
| Test Mode | Typical Doherty Single-Carrier W-CDMA | — |
| Application Class | Class AB or Class C capable | — |
| Modulation Formats | W-CDMA, LTE, OFDM, multi-carrier | — |
| 패키지 | NI-780S-4 (ceramic, flange-mount, air-cavity) | — |
| 실장 유형 | Through-hole flange-mount with screw attachment | Chassis / flange mount, screw-down |
| Lead Finish | Gold-plated (NiPdAu) | — |
| Lead-Free / RoHS | Compliant | — |
| 동작 온도 범위 | -40C to +150C (junction) | — |
| Drain-Source Voltage (V(BR)DSS) | — | 65 V |
| Test Frequency | — | 2.14 GHz |
| Output Power (CW, typical) | — | 100 W |
| Average Output Power (W-CDMA) | — | 24 W |
| Power Gain (typ) | — | 18.3 dB at 2.14 GHz |
| Drain Current (ID, max) | — | [DATA_NEEDED: max ID rating] |
| 패키지 / 케이스 | — | NI-780S (Case 465A-06), 3-pin ceramic flange |
| Configuration | — | Single, push-pull N/A |
| Operating Class | — | Class AB or Class C |
| Application | — | W-CDMA, LTE base-station power amplifiers |
| RoHS 상태 | — | Compliant (per NXP product family) |
| Lead-Free | — | Yes |