MRF8S18120HSR3 vs MRF8S21120HSR3 Vergleich

Detaillierter Direktvergleich von MRF8S18120HSR3 von NXP Semiconductors und MRF8S21120HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF8S18120HSR3 MRF8S18120HSR3 - 72W, 1.81GHz RF LDMOS | NXP | Cellular BTS

MRF8S18120HSR3 - 72W, 1.81GHz RF LDMOS | NXP | Cellular BTS

MRF8S18120HSR3 ✓ Aktiv
NXP Semiconductors
MRF8S21120HSR3 MRF8S21120HSR3 - 28W RF Power MOSFET 2110-2170 MHz | NXP

MRF8S21120HSR3 - 28W RF Power MOSFET 2110-2170 MHz | NXP

MRF8S21120HSR3 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF8S18120HSR3 MRF8S21120HSR3
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $65,00 $59,95
Manufacturer NXP Semiconductors NXP Semiconductors (formerly Freescale)
Part Number MRF8S18120HSR3 MRF8S21120HSR3
Transistortyp LDMOS, N-Channel Enhancement-Mode Lateral MOSFET —
Drain-Source Voltage (Max) 65 V —
Test Drain Voltage 28 V —
Test Quiescent Current (IDQ) 800 mA —
Operating Frequency 1805 MHz to 1880 MHz —
Center Frequency 1.81 GHz —
Output Power (CW) 72 W —
Power Gain (Typ) 18.2 dB —
Drain Current (Test) 800 mA —
Package Type NI-780S NI-780HS (ceramic flange)
Montagestil Surface Mount (ceramic flange) Through-hole / bolt-down flange
Operating Class Class AB / Class C —
Application GSM / GSM EDGE cellular base station power amplifiers —
RoHS-Status Compliant RoHS compliant
Device Type — N-Channel Enhancement-Mode Lateral RF Power MOSFET
Frequency Range — 2110-2170 MHz
Output Power (P1dB / average) — 28 W average, W-CDMA / LTE
Drain-Source Breakdown Voltage V(BR)DSS — 65 V
Operating Drain Voltage — 28 V
Power Gain (Typical) — 17.6 dB at 2.17 GHz
Drain Efficiency (Typical) — [DATA_NEEDED: datasheet efficiency figure]
Operating Mode — Class AB / Class C
Case Mounting — Source on case (flange grounding)
Anzahl der Pins — 2-pin (Gate, Drain)
MSL-Level — 1 (unlimited)
Lead-Free — Yes

Datenblätter & Ressourcen

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