MRF8S18120HSR3 vs MRF8S21120HSR3 Comparação

Comparação detalhada lado a lado de MRF8S18120HSR3 por NXP Semiconductors e MRF8S21120HSR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF8S18120HSR3 MRF8S18120HSR3 - 72W, 1.81GHz RF LDMOS | NXP | Cellular BTS

MRF8S18120HSR3 - 72W, 1.81GHz RF LDMOS | NXP | Cellular BTS

MRF8S18120HSR3 ✓ Ativo
NXP Semiconductors
MRF8S21120HSR3 MRF8S21120HSR3 - 28W RF Power MOSFET 2110-2170 MHz | NXP

MRF8S21120HSR3 - 28W RF Power MOSFET 2110-2170 MHz | NXP

MRF8S21120HSR3 ✓ Ativo

Comparação de especificações

Parâmetro MRF8S18120HSR3 MRF8S21120HSR3
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $65,00 $59,95
Manufacturer NXP Semiconductors NXP Semiconductors (formerly Freescale)
Part Number MRF8S18120HSR3 MRF8S21120HSR3
Tipo de transistor LDMOS, N-Channel Enhancement-Mode Lateral MOSFET —
Drain-Source Voltage (Max) 65 V —
Test Drain Voltage 28 V —
Test Quiescent Current (IDQ) 800 mA —
Operating Frequency 1805 MHz to 1880 MHz —
Center Frequency 1.81 GHz —
Output Power (CW) 72 W —
Power Gain (Typ) 18.2 dB —
Drain Current (Test) 800 mA —
Package Type NI-780S NI-780HS (ceramic flange)
Estilo de montagem Surface Mount (ceramic flange) Through-hole / bolt-down flange
Operating Class Class AB / Class C —
Application GSM / GSM EDGE cellular base station power amplifiers —
Status RoHS Compliant RoHS compliant
Device Type — N-Channel Enhancement-Mode Lateral RF Power MOSFET
Frequency Range — 2110-2170 MHz
Output Power (P1dB / average) — 28 W average, W-CDMA / LTE
Drain-Source Breakdown Voltage V(BR)DSS — 65 V
Operating Drain Voltage — 28 V
Power Gain (Typical) — 17.6 dB at 2.17 GHz
Drain Efficiency (Typical) — [DATA_NEEDED: datasheet efficiency figure]
Operating Mode — Class AB / Class C
Case Mounting — Source on case (flange grounding)
Número de pinos — 2-pin (Gate, Drain)
Nível MSL — 1 (unlimited)
Lead-Free — Yes

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