MRF8S18120HSR3 vs MRF8S21120HSR3 비교
다음의 상세 나란히 비교: MRF8S18120HSR3 제조: NXP Semiconductors 및 MRF8S21120HSR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF8S18120HSR3 | MRF8S21120HSR3 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $65.00 | $59.95 |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF8S18120HSR3 | MRF8S21120HSR3 |
| 트랜지스터 유형 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | — |
| Drain-Source Voltage (Max) | 65 V | — |
| Test Drain Voltage | 28 V | — |
| Test Quiescent Current (IDQ) | 800 mA | — |
| Operating Frequency | 1805 MHz to 1880 MHz | — |
| Center Frequency | 1.81 GHz | — |
| Output Power (CW) | 72 W | — |
| Power Gain (Typ) | 18.2 dB | — |
| Drain Current (Test) | 800 mA | — |
| Package Type | NI-780S | NI-780HS (ceramic flange) |
| 장착 스타일 | Surface Mount (ceramic flange) | Through-hole / bolt-down flange |
| Operating Class | Class AB / Class C | — |
| Application | GSM / GSM EDGE cellular base station power amplifiers | — |
| RoHS 상태 | Compliant | RoHS compliant |
| Device Type | — | N-Channel Enhancement-Mode Lateral RF Power MOSFET |
| Frequency Range | — | 2110-2170 MHz |
| Output Power (P1dB / average) | — | 28 W average, W-CDMA / LTE |
| Drain-Source Breakdown Voltage V(BR)DSS | — | 65 V |
| Operating Drain Voltage | — | 28 V |
| Power Gain (Typical) | — | 17.6 dB at 2.17 GHz |
| Drain Efficiency (Typical) | — | [DATA_NEEDED: datasheet efficiency figure] |
| Operating Mode | — | Class AB / Class C |
| Case Mounting | — | Source on case (flange grounding) |
| 핀 수 | — | 2-pin (Gate, Drain) |
| MSL 레벨 | — | 1 (unlimited) |
| Lead-Free | — | Yes |