MRF8S19260HSR6 vs MRF8S18120HR3 Vergleich
Detaillierter Direktvergleich von MRF8S19260HSR6 von NXP Semiconductors und MRF8S18120HR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF8S18120HR3 - 1.8GHz 72W CW LDMOS RF Power Transistor | NXP
MRF8S18120HR3 ✓ AktivSpezifikationsvergleich
| Parameter | MRF8S19260HSR6 | MRF8S18120HR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $124,00 | $54,20 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF8S19260HSR6 | MRF8S18120HR3 |
| Transistortyp | LDMOS, N-Channel, Dual | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Band | 1930 MHz to 1990 MHz | — |
| Test Frequency | 1.99 GHz | — |
| Drain-Source Voltage (Max Rated) | 65 V | — |
| Operating Drain Voltage (Typical) | 30 V | — |
| Continuous Drain Current (Test) | 1.6 A | — |
| Output Power (CW / Avg) | 74 W average | — |
| Power Gain | 18.2 dB at 1.99 GHz | — |
| Gehäuse / Bauform | NI-1230S-8 (ceramic air-cavity bolt-down) | — |
| Montageart | Chassis / Flange Mount (through-hole RF bolt-down) | Surface Mount / Screw-down heatsink |
| Lead Free Status | Compliant (per DigiKey listing) | — |
| RoHS-Status | Compliant | Compliant per NXP product page |
| Operating Mode | Class AB and Class C capable | Class AB, Class C |
| Application | W-CDMA, CDMA, multi-carrier cellular base station PA | — |
| Frequency Range | — | 1805 to 1880 MHz |
| Output Power (CW) | — | 72 W |
| Power Gain (typ) | — | 18.2 dB at 1.81 GHz |
| Drain-Source Voltage (Rated) | — | 65 V |
| Test Drain Voltage (Vdd) | — | 28 V |
| Test Quiescent Current (Idq) | — | 800 mA |
| Drain Current Rating | — | 10 uA (leakage spec entry per datasheet) |
| Gehäuse | — | NI-780H (3-pin ceramic, flangeless) |
| Target Application | — | GSM, GSM EDGE base station PA |