MRF8S19260HSR6 vs MRF8S18120HR3 对比
详细并排对比 MRF8S19260HSR6 出自 NXP Semiconductors 和 MRF8S18120HR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
NXP Semiconductors
MRF8S18120HR3 - 1.8GHz 72W CW LDMOS RF Power Transistor | NXP
MRF8S18120HR3 ✓ 量产中规格对比
| 参数 | MRF8S19260HSR6 | MRF8S18120HR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $124.00 | $54.20 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF8S19260HSR6 | MRF8S18120HR3 |
| 晶体管类型 | LDMOS, N-Channel, Dual | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Band | 1930 MHz to 1990 MHz | — |
| Test Frequency | 1.99 GHz | — |
| Drain-Source Voltage (Max Rated) | 65 V | — |
| Operating Drain Voltage (Typical) | 30 V | — |
| Continuous Drain Current (Test) | 1.6 A | — |
| Output Power (CW / Avg) | 74 W average | — |
| Power Gain | 18.2 dB at 1.99 GHz | — |
| 封装 / 外壳 | NI-1230S-8 (ceramic air-cavity bolt-down) | — |
| 安装类型 | Chassis / Flange Mount (through-hole RF bolt-down) | Surface Mount / Screw-down heatsink |
| Lead Free Status | Compliant (per DigiKey listing) | — |
| RoHS 状态 | Compliant | Compliant per NXP product page |
| Operating Mode | Class AB and Class C capable | Class AB, Class C |
| Application | W-CDMA, CDMA, multi-carrier cellular base station PA | — |
| Frequency Range | — | 1805 to 1880 MHz |
| Output Power (CW) | — | 72 W |
| Power Gain (typ) | — | 18.2 dB at 1.81 GHz |
| Drain-Source Voltage (Rated) | — | 65 V |
| Test Drain Voltage (Vdd) | — | 28 V |
| Test Quiescent Current (Idq) | — | 800 mA |
| Drain Current Rating | — | 10 uA (leakage spec entry per datasheet) |
| 封装 | — | NI-780H (3-pin ceramic, flangeless) |
| Target Application | — | GSM, GSM EDGE base station PA |