MRF8S19260HSR6 vs MRF8S18120HR3 Comparaison
Comparaison détaillée côte à côte de MRF8S19260HSR6 par NXP Semiconductors et MRF8S18120HR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF8S18120HR3 - 1.8GHz 72W CW LDMOS RF Power Transistor | NXP
MRF8S18120HR3 ✓ ActifComparaison des spécifications
| Paramètre | MRF8S19260HSR6 | MRF8S18120HR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $124,00 | $54,20 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF8S19260HSR6 | MRF8S18120HR3 |
| Type de transistor | LDMOS, N-Channel, Dual | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Band | 1930 MHz to 1990 MHz | — |
| Test Frequency | 1.99 GHz | — |
| Drain-Source Voltage (Max Rated) | 65 V | — |
| Operating Drain Voltage (Typical) | 30 V | — |
| Continuous Drain Current (Test) | 1.6 A | — |
| Output Power (CW / Avg) | 74 W average | — |
| Power Gain | 18.2 dB at 1.99 GHz | — |
| Boîtier / Format | NI-1230S-8 (ceramic air-cavity bolt-down) | — |
| Type de montage | Chassis / Flange Mount (through-hole RF bolt-down) | Surface Mount / Screw-down heatsink |
| Lead Free Status | Compliant (per DigiKey listing) | — |
| Statut RoHS | Compliant | Compliant per NXP product page |
| Operating Mode | Class AB and Class C capable | Class AB, Class C |
| Application | W-CDMA, CDMA, multi-carrier cellular base station PA | — |
| Frequency Range | — | 1805 to 1880 MHz |
| Output Power (CW) | — | 72 W |
| Power Gain (typ) | — | 18.2 dB at 1.81 GHz |
| Drain-Source Voltage (Rated) | — | 65 V |
| Test Drain Voltage (Vdd) | — | 28 V |
| Test Quiescent Current (Idq) | — | 800 mA |
| Drain Current Rating | — | 10 uA (leakage spec entry per datasheet) |
| Boîtier | — | NI-780H (3-pin ceramic, flangeless) |
| Target Application | — | GSM, GSM EDGE base station PA |