MRF8S9102NR3 vs MRF6S9160HSR3 Vergleich
Detaillierter Direktvergleich von MRF8S9102NR3 von NXP Semiconductors und MRF6S9160HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ Letzte BestellmöglichkeitSpezifikationsvergleich
| Parameter | MRF8S9102NR3 | MRF6S9160HSR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Letzte Kaufgelegenheit |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $24,10 | $92,40 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Family | MRF8S9102N / HV8 series | — |
| Transistortyp | N-Channel Lateral Enhancement-Mode MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Application | RF Power Amplifier, W-CDMA base station | RF Power Amplifier |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 920 MHz | 880 MHz |
| Drain-Source Operating Voltage (VDS) | 28 V (typical test condition) | — |
| Drain-Source Breakdown Voltage (VDSS) | 70 V (max) | — |
| Average Output Power (POUT) | 28 W | — |
| Drain Current (ID) at bias | 750 mA | — |
| Power Gain (Gp) | 23.1 dB | — |
| Modulation Format | Single W-CDMA (also Class AB/C capable) | — |
| Gehäuse | OM-780-2 (3-pin ceramic, flange mount) | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount |
| Montageart | Chassis / flange mount with bolt-down thermal pad | Flange / Chassis Mount with screw holes |
| Pin-Anzahl | 3 | — |
| RoHS-Status | [DATA_NEEDED: rohs compliance] | — |
| Operating Mode | Class AB or Class C | — |
| Operating Frequency | — | 865 MHz to 960 MHz |
| Drain-Source Voltage (Vdss) Rated | — | 68 V |
| Operating Voltage (VDD) | — | 28 V |
| Test Bias Current (IDQ) | — | 1.2 A |
| Output Power (Pout, Avg.) | — | 35 W Avg. |
| Power Gain | — | 20.9 dB typical at 880 MHz |
| Drain Efficiency | — | 31% typical at 880 MHz |
| ACPR @ 750 kHz Offset | — | -46.8 dBc (N-CDMA) |
| Lead-Free Status | — | Lead free (HSR3 suffix) |
| Designed Waveforms | — | N-CDMA, GSM, GSM EDGE, multicarrier |