MRF8S9102NR3 vs MRF6S9160HSR3 비교

다음의 상세 나란히 비교: MRF8S9102NR3 제조: NXP Semiconductors 및 MRF6S9160HSR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MRF8S9102NR3 MRF8S9102NR3 - 28W RF Power MOSFET 865-960MHz | NXP

MRF8S9102NR3 - 28W RF Power MOSFET 865-960MHz | NXP

MRF8S9102NR3 ✓ 활성
NXP Semiconductors
MRF6S9160HSR3 MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors

MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors

MRF6S9160HSR3 ⚠ 최종 구매

사양 비교

파라미터 MRF8S9102NR3 MRF6S9160HSR3
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 최종 구매
재고 상태 In Stock In Stock
단가 (USD) $24.10 $92.40
Manufacturer NXP Semiconductors (formerly Freescale) —
Part Family MRF8S9102N / HV8 series —
트랜지스터 유형 N-Channel Lateral Enhancement-Mode MOSFET LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Application RF Power Amplifier, W-CDMA base station RF Power Amplifier
Operating Frequency Range 865 MHz to 960 MHz —
Test Frequency 920 MHz 880 MHz
Drain-Source Operating Voltage (VDS) 28 V (typical test condition) —
Drain-Source Breakdown Voltage (VDSS) 70 V (max) —
Average Output Power (POUT) 28 W —
Drain Current (ID) at bias 750 mA —
Power Gain (Gp) 23.1 dB —
Modulation Format Single W-CDMA (also Class AB/C capable) —
패키지 OM-780-2 (3-pin ceramic, flange mount) NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount
실장 유형 Chassis / flange mount with bolt-down thermal pad Flange / Chassis Mount with screw holes
핀 수 3 —
RoHS 상태 [DATA_NEEDED: rohs compliance] —
Operating Mode Class AB or Class C —
Operating Frequency — 865 MHz to 960 MHz
Drain-Source Voltage (Vdss) Rated — 68 V
Operating Voltage (VDD) — 28 V
Test Bias Current (IDQ) — 1.2 A
Output Power (Pout, Avg.) — 35 W Avg.
Power Gain — 20.9 dB typical at 880 MHz
Drain Efficiency — 31% typical at 880 MHz
ACPR @ 750 kHz Offset — -46.8 dBc (N-CDMA)
Lead-Free Status — Lead free (HSR3 suffix)
Designed Waveforms — N-CDMA, GSM, GSM EDGE, multicarrier

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