MRF8S9102NR3 vs MRF6S9160HSR3 Comparaison
Comparaison détaillée côte à côte de MRF8S9102NR3 par NXP Semiconductors et MRF6S9160HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ Dernier achatComparaison des spécifications
| Paramètre | MRF8S9102NR3 | MRF6S9160HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Dernier achat |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $24,10 | $92,40 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Family | MRF8S9102N / HV8 series | — |
| Type de transistor | N-Channel Lateral Enhancement-Mode MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Application | RF Power Amplifier, W-CDMA base station | RF Power Amplifier |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 920 MHz | 880 MHz |
| Drain-Source Operating Voltage (VDS) | 28 V (typical test condition) | — |
| Drain-Source Breakdown Voltage (VDSS) | 70 V (max) | — |
| Average Output Power (POUT) | 28 W | — |
| Drain Current (ID) at bias | 750 mA | — |
| Power Gain (Gp) | 23.1 dB | — |
| Modulation Format | Single W-CDMA (also Class AB/C capable) | — |
| Boîtier | OM-780-2 (3-pin ceramic, flange mount) | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount |
| Type de montage | Chassis / flange mount with bolt-down thermal pad | Flange / Chassis Mount with screw holes |
| Nombre de broches | 3 | — |
| Statut RoHS | [DATA_NEEDED: rohs compliance] | — |
| Operating Mode | Class AB or Class C | — |
| Operating Frequency | — | 865 MHz to 960 MHz |
| Drain-Source Voltage (Vdss) Rated | — | 68 V |
| Operating Voltage (VDD) | — | 28 V |
| Test Bias Current (IDQ) | — | 1.2 A |
| Output Power (Pout, Avg.) | — | 35 W Avg. |
| Power Gain | — | 20.9 dB typical at 880 MHz |
| Drain Efficiency | — | 31% typical at 880 MHz |
| ACPR @ 750 kHz Offset | — | -46.8 dBc (N-CDMA) |
| Lead-Free Status | — | Lead free (HSR3 suffix) |
| Designed Waveforms | — | N-CDMA, GSM, GSM EDGE, multicarrier |