MRF9030MBR1 vs MRF9030LR1 Vergleich
Detaillierter Direktvergleich von MRF9030MBR1 von NXP Semiconductors und MRF9030LR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF9030LR1 - 945MHz 30W 26V RF Power MOSFET | NXP Semiconductors
MRF9030LR1 ✓ AktivSpezifikationsvergleich
| Parameter | MRF9030MBR1 | MRF9030LR1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $25,80 | $21,10 |
| Manufacturer | NXP Semiconductors (formerly Freescale / Motorola) | — |
| Part Family | RF Sub-Micron MOSFET Line | — |
| Transistortyp | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Lateral MOSFET (RF Power) |
| Configuration | Single, common-source | Single transistor, common-source |
| Typical Output Power | 30 W at 945 MHz | — |
| Operating Frequency Range | DC to 1000 MHz | — |
| Power Gain (typical) | 20 dB | — |
| Drain-Source Voltage (Vds) Rating | 26 V | — |
| Typical Bias Current | 250 mA | — |
| Montageart | Surface Mount (flanged ceramic) | Chassis / heatsink mount (flanged ceramic) |
| Gehäuse | TO-272-2 (ceramic, 2-lead flanged) | NI-360 (NI-360L) ceramic flange, 3-pin (Drain / Gate / Source) |
| Maximum Dissipation (per Partstack) | 139 W | — |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | 3 | — |
| Application | Broadband RF power amplifier / large-signal common-source amplifier | — |
| Polarity / Channel Mode | N-Channel, enhancement-mode | — |
| RoHS-Status | [DATA_NEEDED: RoHS compliance status from manufacturer page] | Compliant (per current NXP product page) |
| Technology | — | Enhancement-Mode Lateral RF Sub-Micron MOSFET |
| Operating Frequency | — | Up to 1000 MHz (1.0 GHz) |
| Test Frequency | — | 945 MHz |
| Drain-Source Voltage (Vdss) | — | 68 V |
| Continuous Drain Current (Id) | — | 250 mA (datasheet typical) |
| Output Power (Pout) | — | 30 W (CW / pulsed RF) |
| Power Gain (Gp) | — | 19 dB (typical at 945 MHz) |
| Drain Efficiency | — | [DATA_NEEDED: typical drain efficiency %] |
| Supply Voltage (Vdd) | — | 26 V (typical base-station bias) |
| Maximum Power Dissipation | — | 92 W (absolute, with proper heatsinking) |
| Betriebstemperatur | — | -40C to +150C (junction, derated) |
| Storage Temperature | — | -65C to +150C |
| Lead Finish | — | Gold-plated (per NI-360 case 360B-05) |
| MSL-Level | — | Not applicable (non-SMD ceramic flange) |