MRF9030MBR1 vs MRF9030LR1 비교

다음의 상세 나란히 비교: MRF9030MBR1 제조: NXP Semiconductors 및 MRF9030LR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MRF9030MBR1 MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 ✓ 활성
NXP Semiconductors
MRF9030LR1 MRF9030LR1 - 945MHz 30W 26V RF Power MOSFET | NXP Semiconductors

MRF9030LR1 - 945MHz 30W 26V RF Power MOSFET | NXP Semiconductors

MRF9030LR1 ✓ 활성

사양 비교

파라미터 MRF9030MBR1 MRF9030LR1
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $25.80 $21.10
Manufacturer NXP Semiconductors (formerly Freescale / Motorola) —
Part Family RF Sub-Micron MOSFET Line —
트랜지스터 유형 N-Channel Enhancement-Mode Lateral MOSFET N-Channel Lateral MOSFET (RF Power)
Configuration Single, common-source Single transistor, common-source
Typical Output Power 30 W at 945 MHz —
Operating Frequency Range DC to 1000 MHz —
Power Gain (typical) 20 dB —
Drain-Source Voltage (Vds) Rating 26 V —
Typical Bias Current 250 mA —
실장 유형 Surface Mount (flanged ceramic) Chassis / heatsink mount (flanged ceramic)
패키지 TO-272-2 (ceramic, 2-lead flanged) NI-360 (NI-360L) ceramic flange, 3-pin (Drain / Gate / Source)
Maximum Dissipation (per Partstack) 139 W —
습도 민감도 레벨 (MSL) 3 —
Application Broadband RF power amplifier / large-signal common-source amplifier —
Polarity / Channel Mode N-Channel, enhancement-mode —
RoHS 상태 [DATA_NEEDED: RoHS compliance status from manufacturer page] Compliant (per current NXP product page)
Technology — Enhancement-Mode Lateral RF Sub-Micron MOSFET
Operating Frequency — Up to 1000 MHz (1.0 GHz)
Test Frequency — 945 MHz
Drain-Source Voltage (Vdss) — 68 V
Continuous Drain Current (Id) — 250 mA (datasheet typical)
Output Power (Pout) — 30 W (CW / pulsed RF)
Power Gain (Gp) — 19 dB (typical at 945 MHz)
Drain Efficiency — [DATA_NEEDED: typical drain efficiency %]
Supply Voltage (Vdd) — 26 V (typical base-station bias)
Maximum Power Dissipation — 92 W (absolute, with proper heatsinking)
동작 온도 — -40C to +150C (junction, derated)
Storage Temperature — -65C to +150C
Lead Finish — Gold-plated (per NI-360 case 360B-05)
MSL 레벨 — Not applicable (non-SMD ceramic flange)

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