MRF9030MBR1 vs MRF9030LR1 对比

详细并排对比 MRF9030MBR1 出自 NXP Semiconductors 和 MRF9030LR1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF9030MBR1 MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 ✓ 量产中
NXP Semiconductors
MRF9030LR1 MRF9030LR1 - 945MHz 30W 26V RF Power MOSFET | NXP Semiconductors

MRF9030LR1 - 945MHz 30W 26V RF Power MOSFET | NXP Semiconductors

MRF9030LR1 ✓ 量产中

规格对比

参数 MRF9030MBR1 MRF9030LR1
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $25.80 $21.10
Manufacturer NXP Semiconductors (formerly Freescale / Motorola) —
Part Family RF Sub-Micron MOSFET Line —
晶体管类型 N-Channel Enhancement-Mode Lateral MOSFET N-Channel Lateral MOSFET (RF Power)
Configuration Single, common-source Single transistor, common-source
Typical Output Power 30 W at 945 MHz —
Operating Frequency Range DC to 1000 MHz —
Power Gain (typical) 20 dB —
Drain-Source Voltage (Vds) Rating 26 V —
Typical Bias Current 250 mA —
安装类型 Surface Mount (flanged ceramic) Chassis / heatsink mount (flanged ceramic)
封装 TO-272-2 (ceramic, 2-lead flanged) NI-360 (NI-360L) ceramic flange, 3-pin (Drain / Gate / Source)
Maximum Dissipation (per Partstack) 139 W —
湿敏等级(MSL) 3 —
Application Broadband RF power amplifier / large-signal common-source amplifier —
Polarity / Channel Mode N-Channel, enhancement-mode —
RoHS 状态 [DATA_NEEDED: RoHS compliance status from manufacturer page] Compliant (per current NXP product page)
Technology — Enhancement-Mode Lateral RF Sub-Micron MOSFET
Operating Frequency — Up to 1000 MHz (1.0 GHz)
Test Frequency — 945 MHz
Drain-Source Voltage (Vdss) — 68 V
Continuous Drain Current (Id) — 250 mA (datasheet typical)
Output Power (Pout) — 30 W (CW / pulsed RF)
Power Gain (Gp) — 19 dB (typical at 945 MHz)
Drain Efficiency — [DATA_NEEDED: typical drain efficiency %]
Supply Voltage (Vdd) — 26 V (typical base-station bias)
Maximum Power Dissipation — 92 W (absolute, with proper heatsinking)
工作温度 — -40C to +150C (junction, derated)
Storage Temperature — -65C to +150C
Lead Finish — Gold-plated (per NI-360 case 360B-05)
MSL 等级 — Not applicable (non-SMD ceramic flange)

数据手册与资源

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