MRFE6P9220HR3 vs MRFE6S9160HR3 Vergleich
Detaillierter Direktvergleich von MRFE6P9220HR3 von NXP Semiconductors und MRFE6S9160HR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MRFE6P9220HR3 | MRFE6S9160HR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $232,20 | $25,20 |
| Transistortyp | LDMOS, N-Channel Enhancement-Mode, Lateral | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power MOSFET | HV6E lateral MOSFET (LDMOS-like) |
| Frequency Range | 865 MHz to 1000 MHz | — |
| Test Frequency | 880 MHz | 880 MHz |
| Drain-Source Voltage (Vdss) Max | 66 V | — |
| Test Supply Voltage | 28 V | — |
| Test Drain Current | 1.6 A | — |
| Output Power (Avg, N-CDMA) | 47 W | — |
| Peak Output Power | 200 W | — |
| Power Gain (Typ) | 20 dB at 880 MHz | — |
| Drain Efficiency | [DATA_NEEDED: typical drain efficiency % at 47 W avg] | 32.4% (typical, N-CDMA, 880 MHz) |
| Gehäuse | NI-860C3 (NI860ML), ceramic-metal sealed cofired, surface mount | — |
| Configuration | Common source, 2 elements | — |
| Montageart | Surface Mount with copper heatsink pad | Chassis / Flange mount (through-hole RF leads) |
| Betriebstemperaturbereich | [DATA_NEEDED: Tj max / operating range] | -40C to +150C (junction) |
| Lead Free Status | Lead Free | — |
| RoHS-Status | Compliant | Compliant |
| Manufacturer | — | NXP Semiconductors |
| Drain-Source Voltage (V DSS) | — | 70 V (max) |
| Drain Current (continuous) | — | [DATA_NEEDED: typical drain current at TC=25C] |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Drain Supply Voltage (V DD) | — | 28 V (typical) |
| Output Power (Average) | — | 35 W (single-carrier N-CDMA, 880 MHz) |
| Output Power (PEP) | — | [DATA_NEEDED: PEP at specified conditions] |
| Power Gain (G ps / G p) | — | 21 dB (typical at 880 MHz) |
| Gehäuse / Bauform | — | NI-780H-2L (ceramic/metal air-cavity flange-mount) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Thermal Resistance (R thJC) | — | [DATA_NEEDED: thermal resistance junction-to-case] |
| Input Match | — | Internally matched input (broadband) |
| Lead-Free | — | Yes |
| MSL-Level | — | Not applicable (non-SMD air-cavity package) |