MRFE6P9220HR3 vs MRFE6S9160HR3 Comparação
Comparação detalhada lado a lado de MRFE6P9220HR3 por NXP Semiconductors e MRFE6S9160HR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | MRFE6P9220HR3 | MRFE6S9160HR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $232,20 | $25,20 |
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode, Lateral | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power MOSFET | HV6E lateral MOSFET (LDMOS-like) |
| Frequency Range | 865 MHz to 1000 MHz | — |
| Test Frequency | 880 MHz | 880 MHz |
| Drain-Source Voltage (Vdss) Max | 66 V | — |
| Test Supply Voltage | 28 V | — |
| Test Drain Current | 1.6 A | — |
| Output Power (Avg, N-CDMA) | 47 W | — |
| Peak Output Power | 200 W | — |
| Power Gain (Typ) | 20 dB at 880 MHz | — |
| Drain Efficiency | [DATA_NEEDED: typical drain efficiency % at 47 W avg] | 32.4% (typical, N-CDMA, 880 MHz) |
| Encapsulamento | NI-860C3 (NI860ML), ceramic-metal sealed cofired, surface mount | — |
| Configuration | Common source, 2 elements | — |
| Tipo de montagem | Surface Mount with copper heatsink pad | Chassis / Flange mount (through-hole RF leads) |
| Faixa de temperatura de operação | [DATA_NEEDED: Tj max / operating range] | -40C to +150C (junction) |
| Lead Free Status | Lead Free | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | NXP Semiconductors |
| Drain-Source Voltage (V DSS) | — | 70 V (max) |
| Drain Current (continuous) | — | [DATA_NEEDED: typical drain current at TC=25C] |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Drain Supply Voltage (V DD) | — | 28 V (typical) |
| Output Power (Average) | — | 35 W (single-carrier N-CDMA, 880 MHz) |
| Output Power (PEP) | — | [DATA_NEEDED: PEP at specified conditions] |
| Power Gain (G ps / G p) | — | 21 dB (typical at 880 MHz) |
| Encapsulamento / Caixa | — | NI-780H-2L (ceramic/metal air-cavity flange-mount) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Thermal Resistance (R thJC) | — | [DATA_NEEDED: thermal resistance junction-to-case] |
| Input Match | — | Internally matched input (broadband) |
| Lead-Free | — | Yes |
| Nível MSL | — | Not applicable (non-SMD air-cavity package) |