MRFE6S9135HR3 vs MRFE6S9135HSR3 Vergleich
Detaillierter Direktvergleich von MRFE6S9135HR3 von NXP Semiconductors und MRFE6S9135HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRFE6S9135HR3 - 135W 900MHz RF Power LDMOS | NXP | NI-880H-2L
MRFE6S9135HR3 ✓ Aktiv
Spezifikationsvergleich
| Parameter | MRFE6S9135HR3 | MRFE6S9135HSR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $108,00 |
| Transistortyp | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Technology | RF Power LDMOS | — |
| Drain-Source Voltage (Rated) | 66 V | — |
| Typical Operating Voltage | 28 V | — |
| Output Power (Pout) | 39 W (at 940 MHz, two-tone test) | 39 W average (single W-CDMA, 940 MHz) |
| Power Gain (Gps) | 21 dB (typical at 940 MHz) | 21 dB |
| Drain Efficiency | 63.3 % (typical at test conditions) | [DATA_NEEDED: drain efficiency at 39 W W-CDMA] |
| Test Current | 1 A | 1 A |
| Operating Frequency Range | Up to 1000 MHz (broadband, 1 MHz to 1000 MHz typical) | — |
| Test Frequency | 940 MHz | — |
| Package Type | NI-880H-2L (ceramic flange) | — |
| Montageart | Screw-mount / bolt-down flange | Through-hole / chassis-mount with flange bolt-down |
| ESD Protection (HBM) | Class II (per JESD22-A114) | — |
| ESD Protection (MM) | Class A (per EIA/JESD22-A115) | — |
| ESD Protection (CDM) | Class IV (per JESD22-C101) | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant per NXP product page |
| Lead Status | Lead-containing (per digchip listing) | — |
| Designed For | Broadband commercial and industrial applications up to 1000 MHz | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Status | — | Active |
| Frequency | — | 940 MHz (designed up to 1000 MHz) |
| Test Voltage | — | 28 V |
| Drain-Source Voltage Rating | — | 66 V |
| Drain Current Rating | — | 10 µA (leakage spec from cross-reference) |
| Gehäuse / Bauform | — | NI-880S (CASE 465B-03, STYLE 1), ceramic, straight leads |
| Input / Output Impedance | — | [DATA_NEEDED: input/output impedance at 940 MHz test condition] |
| Betriebs-Sperrschichttemperatur | — | -40 C to +150 C (typical LDMOS rating; [DATA_NEEDED: exact datasheet Tj max]) |
| Lead Free Status | — | Lead Free |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | — | [DATA_NEEDED: MSL rating from datasheet] |
| Packaging | — | Tape & Reel (suffix R3, 250-unit per reel) |