MRFE6S9135HR3 vs MRFE6S9135HSR3 Comparaison
Comparaison détaillée côte à côte de MRFE6S9135HR3 par NXP Semiconductors et MRFE6S9135HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRFE6S9135HR3 - 135W 900MHz RF Power LDMOS | NXP | NI-880H-2L
MRFE6S9135HR3 ✓ Actif
Comparaison des spécifications
| Paramètre | MRFE6S9135HR3 | MRFE6S9135HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $108,00 |
| Type de transistor | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Technology | RF Power LDMOS | — |
| Drain-Source Voltage (Rated) | 66 V | — |
| Typical Operating Voltage | 28 V | — |
| Output Power (Pout) | 39 W (at 940 MHz, two-tone test) | 39 W average (single W-CDMA, 940 MHz) |
| Power Gain (Gps) | 21 dB (typical at 940 MHz) | 21 dB |
| Drain Efficiency | 63.3 % (typical at test conditions) | [DATA_NEEDED: drain efficiency at 39 W W-CDMA] |
| Test Current | 1 A | 1 A |
| Operating Frequency Range | Up to 1000 MHz (broadband, 1 MHz to 1000 MHz typical) | — |
| Test Frequency | 940 MHz | — |
| Package Type | NI-880H-2L (ceramic flange) | — |
| Type de montage | Screw-mount / bolt-down flange | Through-hole / chassis-mount with flange bolt-down |
| ESD Protection (HBM) | Class II (per JESD22-A114) | — |
| ESD Protection (MM) | Class A (per EIA/JESD22-A115) | — |
| ESD Protection (CDM) | Class IV (per JESD22-C101) | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | Compliant per NXP product page |
| Lead Status | Lead-containing (per digchip listing) | — |
| Designed For | Broadband commercial and industrial applications up to 1000 MHz | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Status | — | Active |
| Frequency | — | 940 MHz (designed up to 1000 MHz) |
| Test Voltage | — | 28 V |
| Drain-Source Voltage Rating | — | 66 V |
| Drain Current Rating | — | 10 µA (leakage spec from cross-reference) |
| Boîtier / Format | — | NI-880S (CASE 465B-03, STYLE 1), ceramic, straight leads |
| Input / Output Impedance | — | [DATA_NEEDED: input/output impedance at 940 MHz test condition] |
| Température de jonction en fonctionnement | — | -40 C to +150 C (typical LDMOS rating; [DATA_NEEDED: exact datasheet Tj max]) |
| Lead Free Status | — | Lead Free |
| Niveau de sensibilité à l'humidité (MSL) | — | [DATA_NEEDED: MSL rating from datasheet] |
| Packaging | — | Tape & Reel (suffix R3, 250-unit per reel) |