MRFE6S9135HR3 vs MRFE6S9135HSR3 Сравнение
Подробное сравнение бок о бок MRFE6S9135HR3 от NXP Semiconductors и MRFE6S9135HSR3 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MRFE6S9135HR3 - 135W 900MHz RF Power LDMOS | NXP | NI-880H-2L
MRFE6S9135HR3 ✓ Активен
Сравнение характеристик
| Параметр | MRFE6S9135HR3 | MRFE6S9135HSR3 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,00 | $108,00 |
| Тип транзистора | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Technology | RF Power LDMOS | — |
| Drain-Source Voltage (Rated) | 66 V | — |
| Typical Operating Voltage | 28 V | — |
| Output Power (Pout) | 39 W (at 940 MHz, two-tone test) | 39 W average (single W-CDMA, 940 MHz) |
| Power Gain (Gps) | 21 dB (typical at 940 MHz) | 21 dB |
| Drain Efficiency | 63.3 % (typical at test conditions) | [DATA_NEEDED: drain efficiency at 39 W W-CDMA] |
| Test Current | 1 A | 1 A |
| Operating Frequency Range | Up to 1000 MHz (broadband, 1 MHz to 1000 MHz typical) | — |
| Test Frequency | 940 MHz | — |
| Package Type | NI-880H-2L (ceramic flange) | — |
| Тип монтажа | Screw-mount / bolt-down flange | Through-hole / chassis-mount with flange bolt-down |
| ESD Protection (HBM) | Class II (per JESD22-A114) | — |
| ESD Protection (MM) | Class A (per EIA/JESD22-A115) | — |
| ESD Protection (CDM) | Class IV (per JESD22-C101) | — |
| Статус RoHS | [DATA_NEEDED: RoHS status] | Compliant per NXP product page |
| Lead Status | Lead-containing (per digchip listing) | — |
| Designed For | Broadband commercial and industrial applications up to 1000 MHz | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Status | — | Active |
| Frequency | — | 940 MHz (designed up to 1000 MHz) |
| Test Voltage | — | 28 V |
| Drain-Source Voltage Rating | — | 66 V |
| Drain Current Rating | — | 10 µA (leakage spec from cross-reference) |
| Корпус / Типоразмер | — | NI-880S (CASE 465B-03, STYLE 1), ceramic, straight leads |
| Input / Output Impedance | — | [DATA_NEEDED: input/output impedance at 940 MHz test condition] |
| Рабочая температура перехода | — | -40 C to +150 C (typical LDMOS rating; [DATA_NEEDED: exact datasheet Tj max]) |
| Lead Free Status | — | Lead Free |
| Уровень чувствительности к влаге (MSL) | — | [DATA_NEEDED: MSL rating from datasheet] |
| Packaging | — | Tape & Reel (suffix R3, 250-unit per reel) |