MRFE6S9200HR3 vs MRFE6S9135HR3 Vergleich
Detaillierter Direktvergleich von MRFE6S9200HR3 von NXP Semiconductors und MRFE6S9135HR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRFE6S9135HR3 - 135W 900MHz RF Power LDMOS | NXP | NI-880H-2L
MRFE6S9135HR3 ✓ AktivSpezifikationsvergleich
| Parameter | MRFE6S9200HR3 | MRFE6S9135HR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $52,30 | $0,00 |
| Transistortyp | N-Channel LDMOS (RF Power) | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Technology | Enhancement-mode LDMOS (HV6E) | RF Power LDMOS |
| Frequency | 880 MHz (test), broadband up to 1000 MHz | — |
| Drain-Source Voltage (Vdss) Rated | 66 V | — |
| Test Supply Voltage | 28 V | — |
| Test Quiescent Current | 1.4 A | — |
| Output Power (Avg) | 58 W (W-CDMA) | — |
| Power Gain | 21 dB at 880 MHz | — |
| Gehäuse | NI-880H-2L ceramic air-cavity | — |
| Montageart | Chassis / flange mount, SMD variant 5.08 mm height | Screw-mount / bolt-down flange |
| Lead Free Status | Lead Free (per datasheet) | — |
| Input Capacitance (Ciss) | 557.27 pF at 28 V | — |
| Operating Mode | Class AB, Class C, Doherty | — |
| Target Application | W-CDMA base-station final stage | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Drain-Source Voltage (Rated) | — | 66 V |
| Typical Operating Voltage | — | 28 V |
| Output Power (Pout) | — | 39 W (at 940 MHz, two-tone test) |
| Power Gain (Gps) | — | 21 dB (typical at 940 MHz) |
| Drain Efficiency | — | 63.3 % (typical at test conditions) |
| Test Current | — | 1 A |
| Operating Frequency Range | — | Up to 1000 MHz (broadband, 1 MHz to 1000 MHz typical) |
| Test Frequency | — | 940 MHz |
| Package Type | — | NI-880H-2L (ceramic flange) |
| ESD Protection (HBM) | — | Class II (per JESD22-A114) |
| ESD Protection (MM) | — | Class A (per EIA/JESD22-A115) |
| ESD Protection (CDM) | — | Class IV (per JESD22-C101) |
| Lead Status | — | Lead-containing (per digchip listing) |
| Designed For | — | Broadband commercial and industrial applications up to 1000 MHz |