MRFE6S9200HR3 vs MRFE6S9135HR3 Comparaison
Comparaison détaillée côte à côte de MRFE6S9200HR3 par NXP Semiconductors et MRFE6S9135HR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRFE6S9135HR3 - 135W 900MHz RF Power LDMOS | NXP | NI-880H-2L
MRFE6S9135HR3 ✓ ActifComparaison des spécifications
| Paramètre | MRFE6S9200HR3 | MRFE6S9135HR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $52,30 | $0,00 |
| Type de transistor | N-Channel LDMOS (RF Power) | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Technology | Enhancement-mode LDMOS (HV6E) | RF Power LDMOS |
| Frequency | 880 MHz (test), broadband up to 1000 MHz | — |
| Drain-Source Voltage (Vdss) Rated | 66 V | — |
| Test Supply Voltage | 28 V | — |
| Test Quiescent Current | 1.4 A | — |
| Output Power (Avg) | 58 W (W-CDMA) | — |
| Power Gain | 21 dB at 880 MHz | — |
| Boîtier | NI-880H-2L ceramic air-cavity | — |
| Type de montage | Chassis / flange mount, SMD variant 5.08 mm height | Screw-mount / bolt-down flange |
| Lead Free Status | Lead Free (per datasheet) | — |
| Input Capacitance (Ciss) | 557.27 pF at 28 V | — |
| Operating Mode | Class AB, Class C, Doherty | — |
| Target Application | W-CDMA base-station final stage | — |
| Statut RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Drain-Source Voltage (Rated) | — | 66 V |
| Typical Operating Voltage | — | 28 V |
| Output Power (Pout) | — | 39 W (at 940 MHz, two-tone test) |
| Power Gain (Gps) | — | 21 dB (typical at 940 MHz) |
| Drain Efficiency | — | 63.3 % (typical at test conditions) |
| Test Current | — | 1 A |
| Operating Frequency Range | — | Up to 1000 MHz (broadband, 1 MHz to 1000 MHz typical) |
| Test Frequency | — | 940 MHz |
| Package Type | — | NI-880H-2L (ceramic flange) |
| ESD Protection (HBM) | — | Class II (per JESD22-A114) |
| ESD Protection (MM) | — | Class A (per EIA/JESD22-A115) |
| ESD Protection (CDM) | — | Class IV (per JESD22-C101) |
| Lead Status | — | Lead-containing (per digchip listing) |
| Designed For | — | Broadband commercial and industrial applications up to 1000 MHz |