MT40A256M16GE-075E:B vs K4AAG165WB-MCRC Vergleich
Detaillierter Direktvergleich von MT40A256M16GE-075E:B von Micron Technology und K4AAG165WB-MCRC von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B ✓ Aktiv
Spezifikationsvergleich
| Parameter | MT40A256M16GE-075E:B | K4AAG165WB-MCRC |
|---|---|---|
| Marke | Micron Technology | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,95 | $7,42 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Speichergröße | 4 Gbit | — |
| Speicherorganisation | 256M x 16 | 1G x 16 |
| Memory Interface | Parallel | — |
| Clock Frequency | 1.33 GHz | 1200 MHz (DDR4-2400) |
| Datenrate | 2666 MT/s (DDR4-2666) | 2400 Mbps (DDR4-2400) |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV/+250 mV | — |
| Internal Banks | 16 | — |
| Refresh | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C | [DATA_NEEDED: refresh rate 1x/2x/4x support] |
| I/O Type | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable generation | — |
| Special Features | Temperature controlled refresh (TCR) | — |
| Gehäuse | 96-FBGA (9 x 14 mm) | 96FBGA |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range for standard grade] | 0 C to +85 C |
| Access Time | [DATA_NEEDED: CAS latency / access time] | — |
| Density | — | 16 Gb (2 GB) |
| Versorgungsspannung | — | 1.2 V |
| Schnittstelle | — | Parallel, DDR4 |
| Bank Architecture | — | DDR4 bank-group architecture |
| Peak Bandwidth (per device) | — | 19.2 GB/s (estimated: 2400 Mbps x 16 bits / 8) |
| CAS-Latenz | — | [DATA_NEEDED: CL value per Samsung datasheet speed bin table] |
| RoHS-Status | — | Compliant (per LCSC/JLCPCB listing: FBGA-96 DRAM ROHS) |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |