MT41K128M16JT vs IS43TR16256AL-125KBLI-TR Vergleich

Detaillierter Direktvergleich von MT41K128M16JT von Micron Technology und IS43TR16256AL-125KBLI-TR von ISSI, Integrated Silicon Solution Inc. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Micron Technology
MT41K128M16JT MT41K128M16JT - 2Gb DDR3L SDRAM 128Mx16 96-FBGA | Micron

MT41K128M16JT - 2Gb DDR3L SDRAM 128Mx16 96-FBGA | Micron

MT41K128M16JT ✓ Aktiv
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBLI-TR IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR ✓ Aktiv

Spezifikationsvergleich

Parameter MT41K128M16JT IS43TR16256AL-125KBLI-TR
Marke Micron Technology ISSI, Integrated Silicon Solution Inc
Kategorie Memory ICs Memory ICs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $9,20 $8,25
Speichertyp DDR3L SDRAM DDR3L SDRAM
Density 2 Gbit —
Speicherorganisation 128M x 16 —
Banks 8 banks —
Prefetch Architecture 8n-bit prefetch —
Supply Voltage (VDD/VDDQ) 1.35 V (typ) / 1.283 V to 1.45 V (DDR3L) 1.35V ± 0.1V, -0.067V
Access Time 0.225 ns (CK to DQ, -125 bin) —
Cycle Time 1.25 ns (-125 bin) / 1.07 ns (-107 bin) —
Max Data Rate 1600 MT/s (-125) / 1866 MT/s (-107) —
Betriebstemperatur 0C to +95C (commercial, no suffix) —
Industrial Temperature Option -40C to +95C (IT suffix) —
Automotive Temperature Option -40C to +105C (AAT) / -40C to +95C (AIT) —
Gehäuse 96-FBGA (8 mm x 14 mm, 0.8 mm pitch) 96-TWBGA (9x13 mm)
Process Technology CMOS —
On-Die Termination Dynamic ODT (nominal/weak/strong) —
Calibration ZQ calibration (240 ohm ext. resistor) —
Refresh Auto self-refresh (ASR) —
Write Feature Write leveling + data mask —
Montageart Surface Mount (FBGA) Surface Mount
RoHS-Status Compliant (Pb-free FBGA) Compliant
Speichergröße — 4Gbit (256M x 16)
Datenbusbreite — 16 bit
Clock Frequency — 800 MHz
Datenrate — 1600 Mbps
CAS-Latenz — 11
Backward Compatible Voltage — 1.5V
Row Cycle Time (tRC) — 20 ns
Row Active Time (tRAS) — 20 ns
Betriebstemperaturbereich — -40°C to +95°C (TC)
Burst Length — 8
On-Die Termination (ODT) — Yes
Refresh Modes — Auto-refresh, Self-refresh

Datenblätter & Ressourcen

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