MT41K128M16JT vs IS43TR16256AL-125KBLI-TR 对比

详细并排对比 MT41K128M16JT 出自 Micron Technology 和 IS43TR16256AL-125KBLI-TR 出自 ISSI, Integrated Silicon Solution Inc。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT41K128M16JT MT41K128M16JT - 2Gb DDR3L SDRAM 128Mx16 96-FBGA | Micron

MT41K128M16JT - 2Gb DDR3L SDRAM 128Mx16 96-FBGA | Micron

MT41K128M16JT ✓ 量产中
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBLI-TR IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR ✓ 量产中

规格对比

参数 MT41K128M16JT IS43TR16256AL-125KBLI-TR
品牌 Micron Technology ISSI, Integrated Silicon Solution Inc
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $9.20 $8.25
存储器类型 DDR3L SDRAM DDR3L SDRAM
Density 2 Gbit —
存储组织 128M x 16 —
Banks 8 banks —
Prefetch Architecture 8n-bit prefetch —
Supply Voltage (VDD/VDDQ) 1.35 V (typ) / 1.283 V to 1.45 V (DDR3L) 1.35V ± 0.1V, -0.067V
Access Time 0.225 ns (CK to DQ, -125 bin) —
Cycle Time 1.25 ns (-125 bin) / 1.07 ns (-107 bin) —
Max Data Rate 1600 MT/s (-125) / 1866 MT/s (-107) —
工作温度 0C to +95C (commercial, no suffix) —
Industrial Temperature Option -40C to +95C (IT suffix) —
Automotive Temperature Option -40C to +105C (AAT) / -40C to +95C (AIT) —
封装 96-FBGA (8 mm x 14 mm, 0.8 mm pitch) 96-TWBGA (9x13 mm)
Process Technology CMOS —
On-Die Termination Dynamic ODT (nominal/weak/strong) —
Calibration ZQ calibration (240 ohm ext. resistor) —
Refresh Auto self-refresh (ASR) —
Write Feature Write leveling + data mask —
安装类型 Surface Mount (FBGA) Surface Mount
RoHS 状态 Compliant (Pb-free FBGA) Compliant
存储容量 — 4Gbit (256M x 16)
数据总线宽度 — 16 bit
Clock Frequency — 800 MHz
数据速率 — 1600 Mbps
CAS 延迟 — 11
Backward Compatible Voltage — 1.5V
Row Cycle Time (tRC) — 20 ns
Row Active Time (tRAS) — 20 ns
工作温度范围 — -40°C to +95°C (TC)
Burst Length — 8
On-Die Termination (ODT) — Yes
Refresh Modes — Auto-refresh, Self-refresh

数据手册与资源

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