MT53D512M32D2DS-053 WT:D vs MT53E256M32D2DS-053 WT:B Vergleich
Detaillierter Direktvergleich von MT53D512M32D2DS-053 WT:D von Micron Technology und MT53E256M32D2DS-053 WT:B von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
MT53D512M32D2DS-053 WT:D - 16Gb LPDDR4 SDRAM | Micron
MT53D512M32D2DS-053 WT:D ✓ AktivMicron Technology
MT53E256M32D2DS-053 - 8Gb LPDDR4 DRAM 1.866GHz | Micron
MT53E256M32D2DS-053 WT:B ✓ AktivSpezifikationsvergleich
| Parameter | MT53D512M32D2DS-053 WT:D | MT53E256M32D2DS-053 WT:B |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $6,05 | $21,90 |
| Speichertyp | SDRAM - Mobile LPDDR4 | LPDDR4 SDRAM (Mobile DRAM) |
| Speichergröße | 16 Gbit (2 GB) | — |
| Speicherorganisation | 512M x 32 | 256M x 32 |
| Clock Frequency / Data Rate | 1.866 GHz (1866 MT/s) | — |
| Gehäuse | 200-WFBGA (10 mm x 14.5 mm) | 200-ball WFBGA, 10 x 14.5 mm |
| Die Configuration | DDP (Double Die Package) | — |
| Betriebstemperatur | -40C to +85C | — |
| Speed Grade | -053 | — |
| Eigenschaften | Auto self-refresh, built-in temperature sensor, auto precharge, write leveling, ZQ calibration, asynchronous reset, data mask | Auto precharge, write leveling, ZQ calibration |
| Montageart | Surface Mount | Surface Mount (BGA) |
| Datenbusbreite | 32 bit | — |
| Memory Interface | Parallel, LPDDR4 | — |
| Self-Refresh | Auto self-refresh with temperature-compensated refresh | Auto self-refresh with built-in temperature sensor |
| Refresh | Auto refresh and self refresh | — |
| Versorgungsspannung | [DATA_NEEDED: VDD/VDDQ supply voltage] | — |
| RoHS-Status | RoHS Compliant (per DigiKey listing) | Compliant (per JLCPCB/LCSC listing) |
| Density | — | 8 Gbit (256M x 32) |
| Datenrate | — | 1866 Mbps/pin (1.866 GHz) |
| Supply Voltage (VDD2/VDDQ) | — | 1.1 V |
| Operating Temperature (WT grade) | — | -30C to +85C |
| Bus Width | — | 32-bit |
| Peak Bandwidth (per device) | — | approximately 7.46 GB/s (32-bit x 1866 Mbps) |
| MSL-Level | — | [DATA_NEEDED: MSL level] |
| Access Time / CAS Latency | — | [DATA_NEEDED: CL at 1866 Mbps] |
| Refresh Interval | — | [DATA_NEEDED: tREFI specification] |
| Package Height | — | [DATA_NEEDED: max package height] |