MT53E256M32D2DS-053 - 8Gb LPDDR4 DRAM 1.866GHz | Micron
Teilenummer: MT53E256M32D2DS-053 WT:B ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $27.23 | $27,23 |
| 10 | $25.9 | $259,00 |
| 100 | $24.5 | $2.450,00 |
| 500 | $23.2 | $11.600,00 |
| 1.000 | $21.9 | $21.900,00 |
MT53E256M32D2DS-053 WT:B Übersicht
LPDDR4 (Low Power Double Data Rate 4) is a JEDEC-defined DRAM interface standard designed for mobile, embedded, and power-sensitive computing systems. Unlike DDR4, which targets servers and PCs, LPDDR4 reduces operating voltage (VDDQ = 1.1V) and adds low-power features such as deep power-down, per-bank refresh, and auto self-refresh, placing it near the top of the memory hierarchy for battery-powered SoC designs.
Key features include the 8Gb (256M x 32) density in a single-die package, a 1.866 GHz clock/data rate, auto self-refresh with a built-in temperature sensor, auto precharge, write leveling, and ZQ calibration for output driver impedance matching. These features simplify controller bring-up and signal-integrity tuning on wide-memory-bus boards.
The -053 speed grade supports the LPDDR4-1866 data rate on a 32-bit data bus, providing roughly 7.46 GB/s peak bandwidth per device. The WT temperature grade covers -30C to +85C ambient, suiting industrial and consumer platforms; automotive (AAT/AUT) and industrial (AIT) variants share the same die and package. Bank architecture, burst length, and CA training follow the standard LPDDR4 protocol, compatible with mainstream SoC memory controllers from Qualcomm, NXP i.MX, Rockchip, and TI processors.
Typical applications include embedded single-board computers, industrial HMIs, networking equipment, automotive infotainment (via AT-grade variants), and portable devices requiring 1-2 GB of DRAM per stack.
For design, keep trace lengths matched on the 32-bit data bus and follow Micron's footprint and routing guidelines for the WFBGA-200 to meet LPDDR4-1866 eye masks.
This page synthesizes distributor pricing, drop-in same-footprint alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für MT53E256M32D2DS-053 WT:B – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MT53E256M32D2DS-053 WT:B (gleiche Bauform und Footprint) – abweichend in Package, Memory Type, Organization, Density, RoHS Status.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MT53E256M32D2DS-046
✅ Drop-In✓ Auf Lager
$9.1 / Stück
Datenblatt ansehen →MT53E256M32D2DS-053 AIT:B
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT53E256M32D2DS-053 AAT:B
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT53E256M32D2DS-053 AUT:B
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT53D512M32D2DS-053 WT:D
✅ Drop-In✓ Auf Lager
$6.05 / Stück
Datenblatt ansehen →MT53E256M32D2DS-053 WT:B Grenzwerte & elektrische Eigenschaften
| Speichertyp | LPDDR4 SDRAM (Mobile DRAM) |
| Density | 8 Gbit (256M x 32) |
| Speicherorganisation | 256M x 32 |
| Datenrate | 1866 Mbps/pin (1.866 GHz) |
| Supply Voltage (VDD2/VDDQ) | 1.1 V |
| Operating Temperature (WT grade) | -30C to +85C |
| Gehäuse | 200-ball WFBGA, 10 x 14.5 mm |
| Montageart | Surface Mount (BGA) |
| Self-Refresh | Auto self-refresh with built-in temperature sensor |
| Eigenschaften | Auto precharge, write leveling, ZQ calibration |
| Bus Width | 32-bit |
| Peak Bandwidth (per device) | approximately 7.46 GB/s (32-bit x 1866 Mbps) |
| RoHS-Status | Compliant (per JLCPCB/LCSC listing) |
MT53E256M32D2DS-053 WT:B 200-ball wfbga, 10 x 14.5 mm Pinbelegungsleitfaden
Pinbelegung für MT53E256M32D2DS-053 WT:B (200-ball wfbga, 10 x 14.5 mm-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für MT53E256M32D2DS-053 WT:B.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
MT53E256M32D2DS-053 WT:B ist geeignet für 6 Anwendungs: Embedded Single-Board Computers, Industrial HMI and Automation Panels, Automotive Infotainment and Clusters, Networking and Communication Equipment, Medical Diagnostic and Monitoring Devices, Portable and Battery-Powered Devices.
Embedded Single-Board Computers
The MT53E256M32D2DS-053 fits embedded SBC designs that need roughly 1-2 GB of DRAM: two 8Gb devices on a 32-bit or 64-bit LPDDR4 bus deliver 2-4 GB with up to 7.46 GB/s per device at 1866 Mbps. Its 1.1V operation and auto self-refresh with built-in temperature sensor keep idle power low in passively cooled enclosures, while the WFBGA-200 (10 x 14.5 mm) footprint suits compact carrier boards. Because the interface follows the standard LPDDR4 protocol, it pairs directly with NXP i.MX 8M, Rockchip, and TI Sitara controllers, requiring only controller-side timing configuration for the -053 speed grade.
Empfohlen
Industrial HMI and Automation Panels
Industrial human-machine interface panels demand memory that survives -30C to +85C ambient swings near motors and drives. The MT53E256M32D2DS-053 WT:B covers this range, and its auto self-refresh with an internal temperature sensor adapts refresh timing automatically, eliminating external thermal compensation. The 8Gb (256M x 32) density supports graphics frame buffers for modern touch UIs, while 1866 Mbps bandwidth keeps rendering responsive. For factories with extended qualification requirements, the AIT:B variant in the same 200-ball WFBGA package provides identical performance with industrial qualification - no PCB change is needed to upgrade the temperature grade.
Empfohlen
Automotive Infotainment and Clusters
For digital cockpit, cluster, and telematics platforms, Micron supplies the MT53E256M32D2DS-053 AAT:B and AUT:B automotive grades of this exact die in the same 200-ball WFBGA package. These variants retain the 8Gb density, 256M x 32 organization, and 1866 Mbps speed of the WT:B while adding automotive temperature and qualification coverage, enabling one memory footprint across consumer prototypes and production-vehicle builds. LPDDR4's 1.1V operation reduces memory subsystem power, important for always-on cluster designs, and the 7.46 GB/s per-device bandwidth supports multi-display rendering with mainstream automotive SoCs.
Empfohlen
Networking and Communication Equipment
Enterprise access points, small-business routers, and industrial gateways use LPDDR4 to buffer packets and run embedded Linux. The MT53E256M32D2DS-053 provides 8Gb per device; stacking two devices on a 64-bit bus yields 2 GB at up to 14.9 GB/s aggregate, sufficient for NAT-heavy workloads at gigabit rates. The 1.1V core supply cuts memory power relative to DDR3L solutions, helping meet fanless thermal budgets, and the WFBGA-200 ball map supports standard six-layer routing at 1866 Mbps. Its auto precharge and ZQ calibration features simplify controller tuning across temperature extremes common in outdoor telecom enclosures.
Empfohlen
Medical Diagnostic and Monitoring Devices
Benchtop medical analyzers and portable patient monitors need memory that runs cool and starts reliably. The MT53E256M32D2DS-053 WT:B draws 1.1V on the memory rail, limiting device heat contribution in sealed enclosures, and its auto self-refresh with built-in temperature sensor maintains data integrity across the -30C to +85C storage and operating excursions of clinical logistics. The 8Gb density supports image processing for ultrasound probes and camera-based diagnostics, while 1866 Mbps bandwidth keeps acquisition pipelines responsive. RoHS compliance per LCSC/JLCPCB listings aligns with medical manufacturing environmental requirements.
Empfohlen
Portable and Battery-Powered Devices
Handheld data collectors, rugged tablets, and test instruments benefit directly from LPDDR4's power profile. The MT53E256M32D2DS-053 operates at 1.1V and supports deep low-power states with auto self-refresh, extending battery runtime during standby - a key advantage over DDR3L designs. Per-device bandwidth of roughly 7.46 GB/s at 1866 Mbps supports responsive application performance, and the compact 10 x 14.5 mm WFBGA-200 package fits slim enclosures. The WT temperature grade plus the built-in temperature sensor handles both pocket-portable and vehicle-docked thermal conditions without firmware-managed refresh adjustments.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MT53E256M32D2DS-053 WT:B – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MT53E256M32D2DS-046 | MT53E256M32D2DS-053 AIT:B | MT53E256M32D2DS-053 AAT:B | MT53D512M32D2DS-053 WT:D |
|---|---|---|---|---|---|
| Package | 200-WFBGA (10 x 14.5 mm) | 200-WFBGA (10 x 14.5 mm) - same | 200-WFBGA (10 x 14.5 mm) - same | 200-WFBGA (10 x 14.5 mm) - same | 200-WFBGA - same footprint |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Density | 8 Gbit (256M x 32) | 8 Gbit (256M x 32) | 8 Gbit (256M x 32) | 8 Gbit (256M x 32) | 4 Gbit (128M x 32) |
| Data Rate | 1866 Mbps (-053) | 1600 Mbps (-046) | 1866 Mbps (-053) | 1866 Mbps (-053) | 1866 Mbps (-053) |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Family Generation | MT53E (current) | MT53E (current) | MT53E (current) | MT53E (current) | MT53D (legacy, migrating toward MT53E) |
Wichtigste Unterscheidungsmerkmale
- Highest speed grade in the same footprint (vs. MT53E256M32D2DS-046)
- Current-generation MT53E family supply security (vs. MT53D512M32D2DS-053 WT:D)
- Automotive upgrade path without redesign (vs. MT53E256M32D2DS-053 AAT:B)
Designhinweise
At the -053 grade's 1866 Mbps data rate, LPDDR4 signal integrity dominates layout success. Route the 32-bit DQ bus with length-matched byte groups (DQ to its DQS strobe kept tightly matched), reference a continuous ground plane, and avoid crossing plane splits under the memory bus. Follow Micron's WFBGA-200 footprint and routing guidelines for CA/CK fly-by topology and on-die termination settings. Eye-mask compliance at 1866 Mbps typically requires 6+ layer PCBs with controlled impedance; simulate with the controller's IBIS models before committing the stackup.
The MT53E256M32D2DS-053 runs from a 1.1V LPDDR4 supply domain. Select a PMIC with a dedicated LPDDR4-rated 1.1V rail and follow the controller's power-sequencing requirements (VDD2/VDDQ ramp relationships). Decouple the VDD balls of the WFBGA-200 with a dense array of small ceramics placed close to the package, since LPDDR4 burst currents are fast and localized. Estimated: at full read bursts the per-device current is on the order of hundreds of milliamps; verify with Micron's current-loading spreadsheet or DRAM power calculator using your actual utilization profile.
ZQ calibration requires the datasheet-specified precision reference resistor routed as a quiet analog trace to the ZQ ball - do not share or length-match it into the data bus. Also confirm the temperature grade suffix before release: WT:B (-30C to +85C), AIT:B (industrial), and AAT:B (automotive) share one footprint, so a BOM substitution of suffix alone changes qualification status. Finally, the legacy MT53D generation is being phased out in several grades per Micron migration notices; design new boards on MT53E family parts to avoid forced re-qualification.
Compliance-Informationen
RoHS compliance indicated by JLCPCB listing for MT53E256M32D2DS-053 WT:B. Automotive-grade suffix variants (AAT:B/AUT:B) exist for automotive qualification programs. Other compliance statuses not stated in provided data.
