MT53E256M32D2DS-053 WT:B vs MT53E256M32D2DS-046 Vergleich
Detaillierter Direktvergleich von MT53E256M32D2DS-053 WT:B von Micron Technology und MT53E256M32D2DS-046 von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
MT53E256M32D2DS-053 - 8Gb LPDDR4 DRAM 1.866GHz | Micron
MT53E256M32D2DS-053 WT:B ✓ AktivMicron Technology
MT53E256M32D2DS-046 - 8Gb LPDDR4 SDRAM | Micron Technology
MT53E256M32D2DS-046 ✓ AktivSpezifikationsvergleich
| Parameter | MT53E256M32D2DS-053 WT:B | MT53E256M32D2DS-046 |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $21,90 | $9,10 |
| Speichertyp | LPDDR4 SDRAM (Mobile DRAM) | LPDDR4 SDRAM (Mobile DRAM) |
| Density | 8 Gbit (256M x 32) | 8 Gbit |
| Speicherorganisation | 256M x 32 | 256M x 32 |
| Datenrate | 1866 Mbps/pin (1.866 GHz) | [DATA_NEEDED: data rate] |
| Supply Voltage (VDD2/VDDQ) | 1.1 V | — |
| Operating Temperature (WT grade) | -30C to +85C | — |
| Gehäuse | 200-ball WFBGA, 10 x 14.5 mm | 200-WFBGA (10 x 14.5 mm) |
| Montageart | Surface Mount (BGA) | Surface Mount |
| Self-Refresh | Auto self-refresh with built-in temperature sensor | — |
| Eigenschaften | Auto precharge, write leveling, ZQ calibration | — |
| Bus Width | 32-bit | — |
| Peak Bandwidth (per device) | approximately 7.46 GB/s (32-bit x 1866 Mbps) | — |
| RoHS-Status | Compliant (per JLCPCB/LCSC listing) | [DATA_NEEDED: RoHS status] |
| MSL-Level | [DATA_NEEDED: MSL level] | — |
| Access Time / CAS Latency | [DATA_NEEDED: CL at 1866 Mbps] | — |
| Refresh Interval | [DATA_NEEDED: tREFI specification] | — |
| Package Height | [DATA_NEEDED: max package height] | — |
| Clock Frequency | — | 2133 MHz |
| Core Supply Voltage (VDD) | — | 1.1 V |
| Interface Supply Voltage (VDDQ) | — | [DATA_NEEDED: VDDQ voltage] |
| Operating Temperature (IT grade) | — | [DATA_NEEDED: IT temperature range] |
| Speed Grade | — | -046 |
| Product Generation | — | MT53E (LPDDR4/LPDDR4X unified die, supports 0.6V VDDQ LPDDR4X operation) |
| Automotive Qualification (AUT grade variant) | — | AEC-Q100 qualified (AUT:B variant) |
| Packaging (TR suffix) | — | Tape & Reel (TR) or Tray |