MT53E256M32D2DS-053 WT:B vs MT53E256M32D2DS-046 Comparación
Comparación detallada lado a lado de MT53E256M32D2DS-053 WT:B por Micron Technology y MT53E256M32D2DS-046 por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT53E256M32D2DS-053 - 8Gb LPDDR4 DRAM 1.866GHz | Micron
MT53E256M32D2DS-053 WT:B ✓ ActivoMicron Technology
MT53E256M32D2DS-046 - 8Gb LPDDR4 SDRAM | Micron Technology
MT53E256M32D2DS-046 ✓ ActivoComparación de especificaciones
| Parámetro | MT53E256M32D2DS-053 WT:B | MT53E256M32D2DS-046 |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $21,90 | $9,10 |
| Tipo de memoria | LPDDR4 SDRAM (Mobile DRAM) | LPDDR4 SDRAM (Mobile DRAM) |
| Density | 8 Gbit (256M x 32) | 8 Gbit |
| Organización de memoria | 256M x 32 | 256M x 32 |
| Velocidad de datos | 1866 Mbps/pin (1.866 GHz) | [DATA_NEEDED: data rate] |
| Supply Voltage (VDD2/VDDQ) | 1.1 V | — |
| Operating Temperature (WT grade) | -30C to +85C | — |
| Encapsulado | 200-ball WFBGA, 10 x 14.5 mm | 200-WFBGA (10 x 14.5 mm) |
| Tipo de montaje | Surface Mount (BGA) | Surface Mount |
| Self-Refresh | Auto self-refresh with built-in temperature sensor | — |
| Características | Auto precharge, write leveling, ZQ calibration | — |
| Bus Width | 32-bit | — |
| Peak Bandwidth (per device) | approximately 7.46 GB/s (32-bit x 1866 Mbps) | — |
| Estado RoHS | Compliant (per JLCPCB/LCSC listing) | [DATA_NEEDED: RoHS status] |
| Nivel MSL | [DATA_NEEDED: MSL level] | — |
| Access Time / CAS Latency | [DATA_NEEDED: CL at 1866 Mbps] | — |
| Refresh Interval | [DATA_NEEDED: tREFI specification] | — |
| Package Height | [DATA_NEEDED: max package height] | — |
| Clock Frequency | — | 2133 MHz |
| Core Supply Voltage (VDD) | — | 1.1 V |
| Interface Supply Voltage (VDDQ) | — | [DATA_NEEDED: VDDQ voltage] |
| Operating Temperature (IT grade) | — | [DATA_NEEDED: IT temperature range] |
| Speed Grade | — | -046 |
| Product Generation | — | MT53E (LPDDR4/LPDDR4X unified die, supports 0.6V VDDQ LPDDR4X operation) |
| Automotive Qualification (AUT grade variant) | — | AEC-Q100 qualified (AUT:B variant) |
| Packaging (TR suffix) | — | Tape & Reel (TR) or Tray |