MT58L64L32FT-10 vs MT58L64L32PT7.5 Vergleich
Detaillierter Direktvergleich von MT58L64L32FT-10 von Micron Technology und MT58L64L32PT7.5 von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
MT58L64L32FT-10 - 2Mb Sync Burst SRAM 10ns 66MHz | Micron
MT58L64L32FT-10 ✗ AbgekündigtMicron Technology
MT58L64L32PT7.5 - 2Mbit Sync Burst SRAM 133MHz | Micron
MT58L64L32PT7.5 ✗ AbgekündigtSpezifikationsvergleich
| Parameter | MT58L64L32FT-10 | MT58L64L32PT7.5 |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Ende des Lebenszyklus | Ende des Lebenszyklus |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $19,90 |
| Speichertyp | SRAM - Synchronous Burst (Flow-Through SyncBurst) | SRAM - Synchronous (SYNCBURST Pipelined) |
| Speichergröße | 2 Mbit | 2 Mbit |
| Speicherorganisation | 64K x 32/36 (also 128K x 18) | 64K x 32 |
| Access Time | 10 ns | 4 ns |
| Maximale Taktfrequenz | 66 MHz | — |
| Schnittstelle | Parallel | Parallel |
| Supply Voltage VDD | 3.3 V (+0.3 V/-0.165 V) | — |
| Output Buffer Supply VDDQ | 2.5 V isolated or 3.3 V | — |
| Write Control | Individual BYTE WRITE enables | — |
| Standby Feature | SNOOZE MODE reduced-power standby | — |
| Data I/O | Common data inputs and data outputs | — |
| Burst Modes | Linear and interleaved burst address sequences | — |
| Gehäuse | 100-TQFP (14 x 20.1 mm) | 100-TQFP (14 x 20.1 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | 0C to +70C (commercial; -10IT variant industrial) | [DATA_NEEDED: operating temperature range] |
| RoHS-Status | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Clock Frequency | — | 133 MHz |
| Supply Voltage Range | — | 3.135 V to 3.6 V |
| Lead Pitch | — | 0.5 mm |
| Memory Format | — | Volatile |
| I/O Type | — | LVTTL-compatible 3.3V |
| Manufacturer | — | Micron Technology (also listed under Samsung Semiconductor, Inc. marketplace listing) |