MT58L64L32FT-10 vs MT58L64L32PT7.5 对比

详细并排对比 MT58L64L32FT-10 出自 Micron Technology 和 MT58L64L32PT7.5 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT58L64L32FT-10 MT58L64L32FT-10 - 2Mb Sync Burst SRAM 10ns 66MHz | Micron

MT58L64L32FT-10 - 2Mb Sync Burst SRAM 10ns 66MHz | Micron

MT58L64L32FT-10 ✗ 停产
Micron Technology
MT58L64L32PT7.5 MT58L64L32PT7.5 - 2Mbit Sync Burst SRAM 133MHz | Micron

MT58L64L32PT7.5 - 2Mbit Sync Burst SRAM 133MHz | Micron

MT58L64L32PT7.5 ✗ 停产

规格对比

参数 MT58L64L32FT-10 MT58L64L32PT7.5
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 停产 停产
库存状态 有库存 有库存
单价(USD) $0.00 $19.90
存储器类型 SRAM - Synchronous Burst (Flow-Through SyncBurst) SRAM - Synchronous (SYNCBURST Pipelined)
存储容量 2 Mbit 2 Mbit
存储组织 64K x 32/36 (also 128K x 18) 64K x 32
Access Time 10 ns 4 ns
最大时钟频率 66 MHz —
接口 Parallel Parallel
Supply Voltage VDD 3.3 V (+0.3 V/-0.165 V) —
Output Buffer Supply VDDQ 2.5 V isolated or 3.3 V —
Write Control Individual BYTE WRITE enables —
Standby Feature SNOOZE MODE reduced-power standby —
Data I/O Common data inputs and data outputs —
Burst Modes Linear and interleaved burst address sequences —
封装 100-TQFP (14 x 20.1 mm) 100-TQFP (14 x 20.1 mm)
安装类型 Surface Mount Surface Mount
工作温度 0C to +70C (commercial; -10IT variant industrial) [DATA_NEEDED: operating temperature range]
RoHS 状态 [DATA_NEEDED: RoHS compliance status] [DATA_NEEDED: RoHS status]
MSL 等级 [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
Clock Frequency — 133 MHz
Supply Voltage Range — 3.135 V to 3.6 V
Lead Pitch — 0.5 mm
Memory Format — Volatile
I/O Type — LVTTL-compatible 3.3V
Manufacturer — Micron Technology (also listed under Samsung Semiconductor, Inc. marketplace listing)

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