MW4IC2230MBR5 vs MRF7S21150HSR3 Vergleich
Detaillierter Direktvergleich von MW4IC2230MBR5 von NXP Semiconductors und MRF7S21150HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF7S21150HSR3 - 28V 44W RF Power LDMOS, 2110-2170 MHz | NXP
MRF7S21150HSR3 ObsoleteSpezifikationsvergleich
| Parameter | MW4IC2230MBR5 | MRF7S21150HSR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | RF Amplifiers | MOSFETs |
| Lebenszyklusstatus | Obsolete | Obsolete |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $29,85 | $62,80 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Type | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 1.6 GHz to 2.4 GHz | — |
| Output Power (Pout) | 30 W (CW) | — |
| Power Gain | 31 dB (typical) | 17.5 dB (typical at 2.14 GHz) |
| Supply Voltage (Vdd) | 26 V nominal | — |
| Quiescent Current (Idq) | 60 mA | — |
| Technology | LDMOS (Laterally Diffused MOSFET) | — |
| Gehäuse / Bauform | TO-272 WB-16 Variant, Flat Leads (over-molded plastic) | — |
| Montageart | Surface Mount (with heatsink) | Flange / bolt-down with ceramic body |
| Operating Mode | Class AB (typical) | Class AB / Doherty |
| Supported Air Interfaces | Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA | — |
| Input Matching | Internal wideband matching network | — |
| RoHS-Status | [DATA_NEEDED: rohs status] | [DATA_NEEDED: RoHS status] |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| MSL-Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Transistortyp | — | N-Channel LDMOS RF Power MOSFET |
| Frequency Band | — | 2110 MHz to 2170 MHz |
| Test Voltage | — | 28 V |
| Rated Drain Voltage (Vds max) | — | 65 V |
| Average Output Power | — | 44 W (W-CDMA) |
| Peak Output Power | — | 150 W |
| Test Current | — | 1.35 A |
| Gehäuse | — | NI-780S (NI-780 HS variant) |
| Configuration | — | Single, push-pull final stage |
| Lead Configuration | — | High-source-leads (HS) variant |
| Application | — | W-CDMA, LTE base station final-stage PA |
| JEDEC Qualification | — | JESD22 thermal/mechanical |