MW4IC2230MBR5 vs MRF7S21150HSR3 Comparaison
Comparaison détaillée côte à côte de MW4IC2230MBR5 par NXP Semiconductors et MRF7S21150HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF7S21150HSR3 - 28V 44W RF Power LDMOS, 2110-2170 MHz | NXP
MRF7S21150HSR3 ObsoleteComparaison des spécifications
| Paramètre | MW4IC2230MBR5 | MRF7S21150HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | RF Amplifiers | MOSFETs |
| Statut du cycle de vie | Obsolete | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $29,85 | $62,80 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Type | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 1.6 GHz to 2.4 GHz | — |
| Output Power (Pout) | 30 W (CW) | — |
| Power Gain | 31 dB (typical) | 17.5 dB (typical at 2.14 GHz) |
| Supply Voltage (Vdd) | 26 V nominal | — |
| Quiescent Current (Idq) | 60 mA | — |
| Technology | LDMOS (Laterally Diffused MOSFET) | — |
| Boîtier / Format | TO-272 WB-16 Variant, Flat Leads (over-molded plastic) | — |
| Type de montage | Surface Mount (with heatsink) | Flange / bolt-down with ceramic body |
| Operating Mode | Class AB (typical) | Class AB / Doherty |
| Supported Air Interfaces | Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA | — |
| Input Matching | Internal wideband matching network | — |
| Statut RoHS | [DATA_NEEDED: rohs status] | [DATA_NEEDED: RoHS status] |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| Niveau MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Type de transistor | — | N-Channel LDMOS RF Power MOSFET |
| Frequency Band | — | 2110 MHz to 2170 MHz |
| Test Voltage | — | 28 V |
| Rated Drain Voltage (Vds max) | — | 65 V |
| Average Output Power | — | 44 W (W-CDMA) |
| Peak Output Power | — | 150 W |
| Test Current | — | 1.35 A |
| Boîtier | — | NI-780S (NI-780 HS variant) |
| Configuration | — | Single, push-pull final stage |
| Lead Configuration | — | High-source-leads (HS) variant |
| Application | — | W-CDMA, LTE base station final-stage PA |
| JEDEC Qualification | — | JESD22 thermal/mechanical |