MW4IC2230MBR5 vs MRF7S21150HSR3 Comparación
Comparación detallada lado a lado de MW4IC2230MBR5 por NXP Semiconductors y MRF7S21150HSR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF7S21150HSR3 - 28V 44W RF Power LDMOS, 2110-2170 MHz | NXP
MRF7S21150HSR3 ObsoleteComparación de especificaciones
| Parámetro | MW4IC2230MBR5 | MRF7S21150HSR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | RF Amplifiers | MOSFETs |
| Estado del ciclo de vida | Obsolete | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $29,85 | $62,80 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Type | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 1.6 GHz to 2.4 GHz | — |
| Output Power (Pout) | 30 W (CW) | — |
| Power Gain | 31 dB (typical) | 17.5 dB (typical at 2.14 GHz) |
| Supply Voltage (Vdd) | 26 V nominal | — |
| Quiescent Current (Idq) | 60 mA | — |
| Technology | LDMOS (Laterally Diffused MOSFET) | — |
| Encapsulado / Carcasa | TO-272 WB-16 Variant, Flat Leads (over-molded plastic) | — |
| Tipo de montaje | Surface Mount (with heatsink) | Flange / bolt-down with ceramic body |
| Operating Mode | Class AB (typical) | Class AB / Doherty |
| Supported Air Interfaces | Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA | — |
| Input Matching | Internal wideband matching network | — |
| Estado RoHS | [DATA_NEEDED: rohs status] | [DATA_NEEDED: RoHS status] |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| Nivel MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Tipo de transistor | — | N-Channel LDMOS RF Power MOSFET |
| Frequency Band | — | 2110 MHz to 2170 MHz |
| Test Voltage | — | 28 V |
| Rated Drain Voltage (Vds max) | — | 65 V |
| Average Output Power | — | 44 W (W-CDMA) |
| Peak Output Power | — | 150 W |
| Test Current | — | 1.35 A |
| Encapsulado | — | NI-780S (NI-780 HS variant) |
| Configuration | — | Single, push-pull final stage |
| Lead Configuration | — | High-source-leads (HS) variant |
| Application | — | W-CDMA, LTE base station final-stage PA |
| JEDEC Qualification | — | JESD22 thermal/mechanical |