MW4IC2230MBR5 vs MW4IC2230NBR1 Vergleich
Detaillierter Direktvergleich von MW4IC2230MBR5 von NXP Semiconductors und MW4IC2230NBR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MW4IC2230NBR1 - 30W W-CDMA RF Power Amplifier, 1.6-2.4 GHz | NXP
MW4IC2230NBR1 ObsoleteSpezifikationsvergleich
| Parameter | MW4IC2230MBR5 | MW4IC2230NBR1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | RF Amplifiers | RF Amplifiers |
| Lebenszyklusstatus | Obsolete | Obsolete |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $29,85 | $32,00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Type | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 1.6 GHz to 2.4 GHz | 1.6 GHz to 2.4 GHz (usable); 2110-2170 MHz target band |
| Output Power (Pout) | 30 W (CW) | — |
| Power Gain | 31 dB (typical) | — |
| Supply Voltage (Vdd) | 26 V nominal | — |
| Quiescent Current (Idq) | 60 mA | — |
| Technology | LDMOS (Laterally Diffused MOSFET) | LDMOS (High Voltage, multi-stage integrated) |
| Gehäuse / Bauform | TO-272 WB-16 Variant, Flat Leads (over-molded plastic) | — |
| Montageart | Surface Mount (with heatsink) | Surface / chassis mount via flange |
| Operating Mode | Class AB (typical) | — |
| Supported Air Interfaces | Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA | — |
| Input Matching | Internal wideband matching network | — |
| RoHS-Status | [DATA_NEEDED: rohs status] | [DATA_NEEDED: RoHS / lead-free status from NXP product page] |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| MSL-Level | [DATA_NEEDED: MSL level] | — |
| Test Frequency | — | 2.14 GHz |
| Supply Voltage (Drain) | — | 26 V to 28 V |
| Supply Current (Quiescent) | — | 60 mA nominal |
| Small-Signal Gain | — | 31 dB typical |
| Output Power (P1dB / Pout) | — | [DATA_NEEDED: P1dB / saturated Pout at W-CDMA] |
| Power Added Efficiency | — | [DATA_NEEDED: PAE typical] |
| Modulation Support | — | W-CDMA, CDMA, EDGE, GSM, TDMA |
| Input Impedance | — | 50 ohm (internally matched) |
| Gehäuse | — | TO-272 WB-16 (over-molded plastic, flange mount) |
| Maximum Operating Temperature | — | 85 C |
| Pin-Anzahl | — | 16 |
| Application | — | Cellular base-station RF power amplifier |
| Lead Configuration | — | Flat leads (TO-272-16 Variant) |