MW4IC2230MBR5 vs MW4IC2230NBR1 Comparación
Comparación detallada lado a lado de MW4IC2230MBR5 por NXP Semiconductors y MW4IC2230NBR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MW4IC2230NBR1 - 30W W-CDMA RF Power Amplifier, 1.6-2.4 GHz | NXP
MW4IC2230NBR1 ObsoleteComparación de especificaciones
| Parámetro | MW4IC2230MBR5 | MW4IC2230NBR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | RF Amplifiers | RF Amplifiers |
| Estado del ciclo de vida | Obsolete | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $29,85 | $32,00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Type | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 1.6 GHz to 2.4 GHz | 1.6 GHz to 2.4 GHz (usable); 2110-2170 MHz target band |
| Output Power (Pout) | 30 W (CW) | — |
| Power Gain | 31 dB (typical) | — |
| Supply Voltage (Vdd) | 26 V nominal | — |
| Quiescent Current (Idq) | 60 mA | — |
| Technology | LDMOS (Laterally Diffused MOSFET) | LDMOS (High Voltage, multi-stage integrated) |
| Encapsulado / Carcasa | TO-272 WB-16 Variant, Flat Leads (over-molded plastic) | — |
| Tipo de montaje | Surface Mount (with heatsink) | Surface / chassis mount via flange |
| Operating Mode | Class AB (typical) | — |
| Supported Air Interfaces | Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA | — |
| Input Matching | Internal wideband matching network | — |
| Estado RoHS | [DATA_NEEDED: rohs status] | [DATA_NEEDED: RoHS / lead-free status from NXP product page] |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| Nivel MSL | [DATA_NEEDED: MSL level] | — |
| Test Frequency | — | 2.14 GHz |
| Supply Voltage (Drain) | — | 26 V to 28 V |
| Supply Current (Quiescent) | — | 60 mA nominal |
| Small-Signal Gain | — | 31 dB typical |
| Output Power (P1dB / Pout) | — | [DATA_NEEDED: P1dB / saturated Pout at W-CDMA] |
| Power Added Efficiency | — | [DATA_NEEDED: PAE typical] |
| Modulation Support | — | W-CDMA, CDMA, EDGE, GSM, TDMA |
| Input Impedance | — | 50 ohm (internally matched) |
| Encapsulado | — | TO-272 WB-16 (over-molded plastic, flange mount) |
| Maximum Operating Temperature | — | 85 C |
| Recuento de pines | — | 16 |
| Application | — | Cellular base-station RF power amplifier |
| Lead Configuration | — | Flat leads (TO-272-16 Variant) |