MW4IC2230MBR5 vs MW4IC2230NBR1 Comparaison
Comparaison détaillée côte à côte de MW4IC2230MBR5 par NXP Semiconductors et MW4IC2230NBR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MW4IC2230NBR1 - 30W W-CDMA RF Power Amplifier, 1.6-2.4 GHz | NXP
MW4IC2230NBR1 ObsoleteComparaison des spécifications
| Paramètre | MW4IC2230MBR5 | MW4IC2230NBR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | RF Amplifiers | RF Amplifiers |
| Statut du cycle de vie | Obsolete | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $29,85 | $32,00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Type | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 1.6 GHz to 2.4 GHz | 1.6 GHz to 2.4 GHz (usable); 2110-2170 MHz target band |
| Output Power (Pout) | 30 W (CW) | — |
| Power Gain | 31 dB (typical) | — |
| Supply Voltage (Vdd) | 26 V nominal | — |
| Quiescent Current (Idq) | 60 mA | — |
| Technology | LDMOS (Laterally Diffused MOSFET) | LDMOS (High Voltage, multi-stage integrated) |
| Boîtier / Format | TO-272 WB-16 Variant, Flat Leads (over-molded plastic) | — |
| Type de montage | Surface Mount (with heatsink) | Surface / chassis mount via flange |
| Operating Mode | Class AB (typical) | — |
| Supported Air Interfaces | Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA | — |
| Input Matching | Internal wideband matching network | — |
| Statut RoHS | [DATA_NEEDED: rohs status] | [DATA_NEEDED: RoHS / lead-free status from NXP product page] |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| Niveau MSL | [DATA_NEEDED: MSL level] | — |
| Test Frequency | — | 2.14 GHz |
| Supply Voltage (Drain) | — | 26 V to 28 V |
| Supply Current (Quiescent) | — | 60 mA nominal |
| Small-Signal Gain | — | 31 dB typical |
| Output Power (P1dB / Pout) | — | [DATA_NEEDED: P1dB / saturated Pout at W-CDMA] |
| Power Added Efficiency | — | [DATA_NEEDED: PAE typical] |
| Modulation Support | — | W-CDMA, CDMA, EDGE, GSM, TDMA |
| Input Impedance | — | 50 ohm (internally matched) |
| Boîtier | — | TO-272 WB-16 (over-molded plastic, flange mount) |
| Maximum Operating Temperature | — | 85 C |
| Nombre de broches | — | 16 |
| Application | — | Cellular base-station RF power amplifier |
| Lead Configuration | — | Flat leads (TO-272-16 Variant) |