N25Q032A13EF4A0F vs N25Q256A13E12A0F Vergleich

Detaillierter Direktvergleich von N25Q032A13EF4A0F von Micron Technology und N25Q256A13E12A0F von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Micron Technology
N25Q032A13EF4A0F N25Q032A13EF4A0F - 32Mbit SPI NOR Flash 108MHz | Micron

N25Q032A13EF4A0F - 32Mbit SPI NOR Flash 108MHz | Micron

N25Q032A13EF4A0F ✓ Aktiv
Micron Technology
N25Q256A13E12A0F N25Q256A13E12A0F - 256Mb SPI NOR Flash, 108MHz | Micron

N25Q256A13E12A0F - 256Mb SPI NOR Flash, 108MHz | Micron

N25Q256A13E12A0F ✓ Aktiv

Spezifikationsvergleich

Parameter N25Q032A13EF4A0F N25Q256A13E12A0F
Marke Micron Technology Micron Technology
Kategorie Memory ICs Memory ICs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,25 $0,00
Speichertyp FLASH - NOR Memory IC (Serial) NOR Flash, Serial SPI
Speichergröße 32 Mbit (4 MB) —
Schnittstelle SPI (Multi-I/O) —
Clock Frequency 108 MHz —
Versorgungsspannung 3 V (2.7 V to 3.6 V) 2.7 V to 3.6 V
Gehäuse 8-UFDFPN (MLP8) 4 x 3 mm 24-ball T-PBGA (6x8 mm)
Montageart Surface Mount Surface Mount
Read Modes Standard, Dual, Quad SPI —
Erase Granularity 4 KB subsector / 64 KB sector —
Grade Automotive —
Write Cycle Endurance [DATA_NEEDED: endurance cycles] —
Data Retention [DATA_NEEDED: retention years] [DATA_NEEDED: data retention years]
Betriebstemperatur [DATA_NEEDED: temperature range] -40C to +125C
Access Time [DATA_NEEDED: access time] 8 ns (per FindIC listing)
Program/Erase Speed [DATA_NEEDED: page program time] —
RoHS-Status Compliant Compliant
Packaging Tape & Reel (T&R) Tape & Reel (TR suffix)
Density — 256 Mbit (32 MB)
Speicherorganisation — 64M x 4 (Mouser listing); 32M x 8 per FindIC listing - see validation note
Max SPI Clock Frequency — 108 MHz
I/O Modes — Single, Dual, Quad I/O (Multiple I/O Serial Flash)
Technology — SLC (Single-Level Cell)
Sector Erase Size — 4 KB
Program/Erase Endurance — [DATA_NEEDED: program/erase endurance cycles]
Active Read Current — [DATA_NEEDED: ICC read current]
Standby Current — [DATA_NEEDED: ICC standby current]

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