NOPB vs STL35N75LF3 Vergleich
Detaillierter Direktvergleich von NOPB von Texas Instruments und STL35N75LF3 von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
STMicroelectronics
STL35N75LF3 - 35V N-Channel Power MOSFET | STMicroelectronics
STL35N75LF3 ✓ AktivSpezifikationsvergleich
| Parameter | NOPB | STL35N75LF3 |
|---|---|---|
| Marke | Texas Instruments | STMicroelectronics |
| Kategorie | Logic ICs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $0,55 |
| Suffix Type | Part-number ordering suffix (not a standalone IC) | — |
| Meaning | No Lead / No Pb (lead-free packaging) | — |
| Origin | National Semiconductor ordering system (inherited by TI) | — |
| Lead Finish | Matte tin (Sn) or Sn-Ag-Cu (lead-free) | — |
| RoHS Compliance | Yes - compliant with EU Directive 2011/65/EU | — |
| REACH Compliance | Compliant (per TI declaration) | — |
| Peak Reflow Temperature | 260 C (JEDEC J-STD-020 lead-free profile) | — |
| MSL Classification | Per JEDEC J-STD-033 (device-dependent, typically MSL 2 or 3) | — |
| Montageart | Surface Mount (packaging dependent on base MPN) | Surface Mount |
| Betriebstemperatur | Inherits base MPN specification | — |
| Equivalent Legacy Suffixes | /PBFREE, /LEADFREE, /LF (vendor-specific) | — |
| Functional Equivalence | Identical die and electrical specs to non-NOPB variant | — |
| Backwards Compatibility | Compatible with Sn-Pb and lead-free assembly lines when reflow profiled correctly | — |
| Document Reference | TI Packaging Terminology Guide (ti.com/design-development/packaging) | — |
| Country of Origin | Multiple (per base MPN country of assembly) | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 35 V |
| Continuous Drain Current (ID) | — | 35 A |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) value] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) | — | [DATA_NEEDED: PD value] |
| Betriebstemperaturbereich | — | -55°C to +150°C |
| Gehäuse | — | PowerFLAT 5x6 |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |
| ESD Protection | — | Integrated |
| Technology | — | Strip-layout |
| Wärmewiderstand, Sperrschicht-Umgebung | — | [DATA_NEEDED: RthJA value] |