NT5AD512M16C4-JR vs MT40A512M16TB-062E:J Vergleich
Detaillierter Direktvergleich von NT5AD512M16C4-JR von Nanya Technology und MT40A512M16TB-062E:J von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron
MT40A512M16TB-062E:J ✓ AktivSpezifikationsvergleich
| Parameter | NT5AD512M16C4-JR | MT40A512M16TB-062E:J |
|---|---|---|
| Marke | Nanya Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $73,75 | $8,10 |
| Speichertyp | DDR4 SDRAM | SDRAM - DDR4 |
| Speicherorganisation | 512M x16 | — |
| Density | 8 Gbit | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Datenrate | 1.6 GHz (DDR4-3200) | — |
| Gehäuse | TFBGA-96 | 96-FBGA (7.5x13.5 mm) |
| Betriebstemperaturbereich | 0°C to +95°C | 0°C to 95°C |
| Standby Current | 0.023 A (max) | — |
| Number of Terminals | 96 | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| RoHS | Compliant | — |
| Speichergröße | — | 8Gbit (512M x 16) |
| Clock Frequency | — | 1.6 GHz |
| Access Time | — | 19 ns |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply Voltage | — | 2.5V (-125mV, +250mV) |
| I/O Type | — | 1.2V pseudo open-drain |
| Refresh Time | — | 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C |
| Internal Banks (x16) | — | 8 (2 groups of 4 banks each) |
| Prefetch Architecture | — | 8n-bit |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |
| Montageart | — | Surface Mount |