PDRQLAKCDF12-00 vs K4RAH165VB-BIQK Vergleich
Detaillierter Direktvergleich von PDRQLAKCDF12-00 von Samsung Electronics und K4RAH165VB-BIQK von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
PDRQLAKCDF12-00 - 16Gb DDR5-7200 SDRAM | Samsung Electronics
PDRQLAKCDF12-00 ✓ Aktiv
Spezifikationsvergleich
| Parameter | PDRQLAKCDF12-00 | K4RAH165VB-BIQK |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $13,60 | $0,00 |
| Speichertyp | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gbit | 16 Gb |
| Speicherorganisation | 1G x 16 | 1G x 16 |
| Datenrate | 7200 Mbps per pin | 4800 Mbps (MT/s) |
| Speed Bin | DDR5-7200 | — |
| Operating Voltage | 1.1 V | — |
| Gehäuse | 102-ball FBGA | [DATA_NEEDED: exact package ball count / FBGA designation] |
| Montageart | Surface Mount | — |
| Generation | DDR5 (improved from 6400 Mbps generation) | — |
| Schnittstelle | JEDEC DDR5 | — |
| Package Height | [DATA_NEEDED: package height] | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| tCK / Cycle Time | [DATA_NEEDED: clock cycle time] | — |
| CAS-Latenz | [DATA_NEEDED: CAS latency] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | — |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Supply Voltage (VDD) | — | 1.1 V |
| On-Die ECC | — | Yes |
| Auto Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| DLL Enabled Mode | — | Yes (spec mode per datasheet) |
| Marke | — | Samsung Semiconductor |