RTAX2000SL-1CGS624E vs RTAX2000S-1CG624PROTO Vergleich

Detaillierter Direktvergleich von RTAX2000SL-1CGS624E von Microchip Technology und RTAX2000S-1CG624PROTO von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Microchip Technology
RTAX2000SL-1CGS624E RTAX2000SL-1CGS624E - 2M-Gate Rad-Tolerant FPGA CGA624 | Microchip

RTAX2000SL-1CGS624E - 2M-Gate Rad-Tolerant FPGA CGA624 | Microchip

RTAX2000SL-1CGS624E ✓ Aktiv
Microchip Technology
RTAX2000S-1CG624PROTO RTAX2000S-1CG624PROTO - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CG624PROTO - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CG624PROTO ✓ Aktiv

Spezifikationsvergleich

Parameter RTAX2000SL-1CGS624E RTAX2000S-1CG624PROTO
Marke Microchip Technology Microchip Technology
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $10.750,00 $0,00
Family RTAX-S/SL Radiation-Tolerant FPGA RTAX-S/SL Radiation-Tolerant FPGA
Equivalent System Gates 2000000 2000000
Additional ASIC Gates 250000 —
Configurable Logic Blocks (CLBs) 21504 21504
Technology CMOS, 0.15 um CMOS antifuse (one-time programmable)
Core Supply Voltage 1.5 V —
Maximum Combinatorial Performance 649 MHz —
Speed Grade -1 -1
Gehäuse CBGA624 / CGA-624 Ceramic Column Grid Array CCGA-624 (CG624 ceramic column grid array)
Package Material Ceramic —
Programming Technology Anti-fuse, one-time programmable, live at power-up —
Embedded Memory Embedded SRAM with built-in FIFO control logic 540 kbits (family max, with optional EDAC)
Radiation Tolerance Radiation-tolerant (space-flight qualified family) —
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich [DATA_NEEDED: operating temperature range] —
RoHS-Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Number of I/Os [DATA_NEEDED: number of user I/Os] —
Logic Cells — 32256
User I/Os (family max) — 684
Total Ionizing Dose (functional) — 300 krad (Si)
Total Ionizing Dose (parametric) — 200 krad (Si)
SEU Rate — Less than 1E-10 errors per bit-day
Maximum System Frequency — 350 MHz (family performance)
Configuration — Live at power-up (nonvolatile antifuse)
Qualification Flow — PROTO (engineering prototype)
Betriebstemperatur — [DATA_NEEDED: operating temperature range]

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