RTAX2000SL-1CGS624E vs RTAX2000S-1CG624PROTO Сравнение
Подробное сравнение бок о бок RTAX2000SL-1CGS624E от Microchip Technology и RTAX2000S-1CG624PROTO от Microchip Technology. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Microchip Technology
RTAX2000SL-1CGS624E - 2M-Gate Rad-Tolerant FPGA CGA624 | Microchip
RTAX2000SL-1CGS624E ✓ АктивенMicrochip Technology
RTAX2000S-1CG624PROTO - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-1CG624PROTO ✓ АктивенСравнение характеристик
| Параметр | RTAX2000SL-1CGS624E | RTAX2000S-1CG624PROTO |
|---|---|---|
| Бренд | Microchip Technology | Microchip Technology |
| Категория | FPGA & CPLD | FPGA & CPLD |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $10.750,00 | $0,00 |
| Family | RTAX-S/SL Radiation-Tolerant FPGA | RTAX-S/SL Radiation-Tolerant FPGA |
| Equivalent System Gates | 2000000 | 2000000 |
| Additional ASIC Gates | 250000 | — |
| Configurable Logic Blocks (CLBs) | 21504 | 21504 |
| Technology | CMOS, 0.15 um | CMOS antifuse (one-time programmable) |
| Core Supply Voltage | 1.5 V | — |
| Maximum Combinatorial Performance | 649 MHz | — |
| Speed Grade | -1 | -1 |
| Корпус | CBGA624 / CGA-624 Ceramic Column Grid Array | CCGA-624 (CG624 ceramic column grid array) |
| Package Material | Ceramic | — |
| Programming Technology | Anti-fuse, one-time programmable, live at power-up | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | 540 kbits (family max, with optional EDAC) |
| Radiation Tolerance | Radiation-tolerant (space-flight qualified family) | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | [DATA_NEEDED: operating temperature range] | — |
| Статус RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Number of I/Os | [DATA_NEEDED: number of user I/Os] | — |
| Logic Cells | — | 32256 |
| User I/Os (family max) | — | 684 |
| Total Ionizing Dose (functional) | — | 300 krad (Si) |
| Total Ionizing Dose (parametric) | — | 200 krad (Si) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Maximum System Frequency | — | 350 MHz (family performance) |
| Configuration | — | Live at power-up (nonvolatile antifuse) |
| Qualification Flow | — | PROTO (engineering prototype) |
| Рабочая температура | — | [DATA_NEEDED: operating temperature range] |