RTAX2000SL-1LG1152V vs RTAX2000S-1LG624V Vergleich

Detaillierter Direktvergleich von RTAX2000SL-1LG1152V von Microchip Technology und RTAX2000S-1LG624V von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Microchip Technology
RTAX2000SL-1LG1152V RTAX2000SL-1LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-1LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-1LG1152V ✓ Aktiv
Microchip Technology
RTAX2000S-1LG624V RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip

RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip

RTAX2000S-1LG624V ✓ Aktiv

Spezifikationsvergleich

Parameter RTAX2000SL-1LG1152V RTAX2000S-1LG624V
Marke Microchip Technology Microchip Technology
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,00 $0,00
Family RTAX-S/SL Radiation-Tolerant FPGAs —
Equivalent Gate Count 2,000,000 gates —
Logic Cells 32,256 —
Configurable Logic Blocks (CLBs) 21,504 21,504
Programming Technology Antifuse (one-time programmable) One-time programmable antifuse, nonvolatile
Radiation Tolerance Radiation-tolerant (space flight grade) —
Speed Grade -1 -1
Gehäuse CG1152 (1152-pin ceramic column grid array) CG624, 624-pin ceramic column grid array
Quality Suffix V (flight grade) —
Configuration Live at power-up, single chip (no external boot PROM) Single-chip, live at power-up (no boot device required)
Core Voltage [DATA_NEEDED: core voltage] —
Betriebstemperatur [DATA_NEEDED: operating temperature range] —
Process Technology Digital CMOS Digital CMOS
Montageart Surface Mount Surface Mount
User I/O [DATA_NEEDED: user I/O count] —
RoHS-Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Equivalent System Gates — 2,000,000 gates
User I/Os (maximum, family) — Up to 684
Embedded Memory — Up to 540 kbits SRAM with optional EDAC protection
Total Ionizing Dose (TID), functional — 300 krad (Si)
Total Ionizing Dose (TID), parametric — 200 krad (Si)
SEU Immunity — Less than 1E-10 errors per bit-day
Package Temperature Suffix — V (space/military screening variant)
Family Lineage — RTAX-S/SL, based on commercial Axcelerator family
Betriebstemperaturbereich — [DATA_NEEDED: operating temperature range]
Core Supply Voltage — [DATA_NEEDED: core supply voltage]

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