RTAX2000SL-1LG1152V vs RTAX2000S-1LG624V Сравнение
Подробное сравнение бок о бок RTAX2000SL-1LG1152V от Microchip Technology и RTAX2000S-1LG624V от Microchip Technology. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Microchip Technology
RTAX2000SL-1LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-1LG1152V ✓ АктивенMicrochip Technology
RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip
RTAX2000S-1LG624V ✓ АктивенСравнение характеристик
| Параметр | RTAX2000SL-1LG1152V | RTAX2000S-1LG624V |
|---|---|---|
| Бренд | Microchip Technology | Microchip Technology |
| Категория | FPGA & CPLD | FPGA & CPLD |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,00 | $0,00 |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | — |
| Equivalent Gate Count | 2,000,000 gates | — |
| Logic Cells | 32,256 | — |
| Configurable Logic Blocks (CLBs) | 21,504 | 21,504 |
| Programming Technology | Antifuse (one-time programmable) | One-time programmable antifuse, nonvolatile |
| Radiation Tolerance | Radiation-tolerant (space flight grade) | — |
| Speed Grade | -1 | -1 |
| Корпус | CG1152 (1152-pin ceramic column grid array) | CG624, 624-pin ceramic column grid array |
| Quality Suffix | V (flight grade) | — |
| Configuration | Live at power-up, single chip (no external boot PROM) | Single-chip, live at power-up (no boot device required) |
| Core Voltage | [DATA_NEEDED: core voltage] | — |
| Рабочая температура | [DATA_NEEDED: operating temperature range] | — |
| Process Technology | Digital CMOS | Digital CMOS |
| Тип монтажа | Surface Mount | Surface Mount |
| User I/O | [DATA_NEEDED: user I/O count] | — |
| Статус RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Equivalent System Gates | — | 2,000,000 gates |
| User I/Os (maximum, family) | — | Up to 684 |
| Embedded Memory | — | Up to 540 kbits SRAM with optional EDAC protection |
| Total Ionizing Dose (TID), functional | — | 300 krad (Si) |
| Total Ionizing Dose (TID), parametric | — | 200 krad (Si) |
| SEU Immunity | — | Less than 1E-10 errors per bit-day |
| Package Temperature Suffix | — | V (space/military screening variant) |
| Family Lineage | — | RTAX-S/SL, based on commercial Axcelerator family |
| Диапазон рабочих температур | — | [DATA_NEEDED: operating temperature range] |
| Core Supply Voltage | — | [DATA_NEEDED: core supply voltage] |